Plasmon energy and lattice energy of binary tetrahedral semiconductors and I–VII ionic compounds

Gorai, Sanjay Kumar; Mahto, P.

doi:10.1007/s12648-012-0053-y

Cited by 5 publications

(3 citation statements)

References 27 publications

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“…Our principal idea is to write the Debye temperature θ D as functional of the bond length d; the bond length d in angstroms and the Plasmon energy (ћω p ) in eV can be related by the following formula [10].…”

Section: Debye Temperaturementioning

confidence: 99%

Simplified expressions for calculating Debye temperature and melting point of II-VI and III-V semiconductors

Daoud¹

2015

Int. J. Sci. World

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Simple empirical expressions between the Debye temperature and the bond length and also between the melting point and the bond length have been proposed. These formulas have been established for two groups of A N B 8-N type binary semiconductors (groups: II-VI and III-V). A good correlation between the Debye temperature and the bond length and also between the melting point and the bond length is obtained. The minimum average percentage deviations in the present approach reveal that our model proves its identity and soundness compared to those of other author relations.

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Section: Debye Temperaturementioning

confidence: 99%

Simplified expressions for calculating Debye temperature and melting point of II-VI and III-V semiconductors

Daoud¹

2015

Int. J. Sci. World

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“…There are different methods of materials prepared for these chalcopyrite's compounds have been suggested. [4][5][6][7][8][9] This structure of chalcopyrite which is obtained from that of zinc blende or sphaerlite by the replacement of cationic sublattice by two different atomic species induces the doubling of the unit cell in a direction, which is conventionally called c and a tetragonal distortion. The parameter /a 2 from its position in the cubic cell, where dA-C and dB-C are the cation -anion distances.…”

Section: Introductionmentioning

confidence: 99%

An Empirical Bulk Modulus Model of Ternary Chalcopyrite Structure Solids

2017

RJC

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A simple empirical relation has been proposed to estimate the bulk modulus (B) of ternary chalcopyrite structure solids of I-II-VI, II-IV-V type from the electronegativies of the constituent atoms and the principal quantum number of atoms of the compounds. The present relation is based on chemical bonding model. The electronegativity and principal quantum number determine the chemical bonding of constituent atoms of compounds. The chemical bonding of compounds is the starting point of the stability of compound which is based on the minimum energy principle. In this study, the ground state property like bulk modulus has been correlated with the nature of bonding of materials. The combination of electronegativity and principal quantum number gives a good account of bonding of ternary chalcopyrite structure solids. These two parameters provide a reliable guide to the structural stability of chalcopyrite structure solids. The computed values for bulk modulus are found to be good agreement with the known ones, the comparison between our present values and the ones in the literature is also given.

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“…This theory has also been used to explain the other properties of some binary semiconductors. [44][45][46][47][48]. Recent development in the ability of computational power and advancement in modelling, using first-principle calculations within density functional theory (DFT), has made predictions of various linear and nonlinear properties of InAlP 2 and InGaP 2 [49] chalcopyrites, CdAl 2 Se 4 [50] defect chalcopyrite, AgCd 2-GaS 4 [51,52] non-centrosymmetric orthorhombic, ZnGeAs 2 [53] pnictides and other materials more accurately [54][55][56][57][58].…”

Section: Introductionmentioning

confidence: 99%

Linear properties of ternary chalcopyrite semiconductors

2014

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Linear properties of ternary chalcopyrite semiconductors have been studied. New relations based on plasma oscillations theory of solids have been proposed for calculation of homopolar, heteropolar and average energy gaps, dielectric constant and ionicity of A-C and B-C bonds in A I B III C 2 VI and A II B IV C 2 V groups of semiconductors. The values of these parameters for 13 new chalcopyrites of A II B IV C 2 V family have been calculated. The calculated values are compared with the available reported values and a fairly good agreement has been obtained.

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Plasmon energy and lattice energy of binary tetrahedral semiconductors and I–VII ionic compounds

Cited by 5 publications

References 27 publications

Simplified expressions for calculating Debye temperature and melting point of II-VI and III-V semiconductors

Simplified expressions for calculating Debye temperature and melting point of II-VI and III-V semiconductors

An Empirical Bulk Modulus Model of Ternary Chalcopyrite Structure Solids

Linear properties of ternary chalcopyrite semiconductors

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