Simplified expressions for calculating Debye temperature and melting point of II-VI and III-V semiconductors

Abstract

Simple empirical expressions between the Debye temperature and the bond length and also between the melting point and the bond length have been proposed. These formulas have been established for two groups of A N B 8-N type binary semiconductors (groups: II-VI and III-V). A good correlation between the Debye temperature and the bond length and also between the melting point and the bond length is obtained. The minimum average percentage deviations in the present approach reveal that our model proves its identity and soundness compared to those of other author relations.

Sound velocities and Debye temperature of BeSe under high pressure up to 50 GPa

“…At zero-pressure, our calculated value (502 K) of the Debye temperature obtained from Eq. (5) of BeSe material is also agree very good agreement with the value (502.47 K) in our previous work [20], the deviation is only about 0.09 %. Using the formula of Eq.…”

Sound velocities and thermal properties of BeX (X=S, Se and Te) alkaline-earth chalcogenides

“…They are also presented in Figure 1. Our obtained values of θD are also in general in good agreement with the majority of other theoretical results [5][6][7][8][9][10], [19], [20]. For BeS compound, our obtained value (628 K) of θD is equal exactly the theoretical value of Ref.…”

“…The calculated melting point Tm of BeS, BeSe and BeTe materials are about 1280 ± 300 K, 1203 ± 300 K, and 1077 ± 300 K respectively; they are also listed in table 4, and compared with the available results of the literature [10], [19], [21], [22]. Our calculated values of the calculated melting point Tm are relatively lower from the theoretical and experimental data of Benosman et al [21] and of Van Vechten [22].…”

“…Using the values: 4.865, 5.137 and 5.617 Å [14] of the lattice parameter a for BeS, BeSe and BeTe respectively, our calculated values of the Debye temperature are listed in table 4, and compared with the available theoretical data [5][6][7][8][9][10], [19], [20]. They are also presented in Figure 1.…”

Empirical prediction of thermal properties, microhardness and sound velocity of cubic zinc-blende AlN

“…where M is the mean atomic weight, d -bond length, and K 3 and K 4 are two empirical parameters slightly depending on the nature group of material. The values of the constants K 3 and K 4 for group III-V semiconducting materials are K 3 = 112.66⋅10 -12 Kg 1/2 ⋅m 5/4 ⋅K and K 4 = = 90.74 K, respectively [27]. Replacing the value (1.8966⋅10 -10 m) deduced from the lattice parameter (4.38 Å) [6] of the bond length in the previous formula, the value of θ D has been calculated and found to be 1027.38 K. This value is slightly higher than the theoretical ones 926 and 948 K reported by Yong et al [21], it is in general in agreement with the value 998.5 K reported in Ref.…”