2008
DOI: 10.1109/jstqe.2007.910988
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Plasma Waves Subterahertz Optical Beating Detection and Enhancement in Long-Channel High-Electron-Mobility Transistors: Experiments and Modeling

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Cited by 22 publications
(20 citation statements)
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“…This process appears to be much more efficient than the one occurring in the ohmic regime. It explains why, at room-temperature experiments of photoexcitation of HEMTs, the plasma modes are more easily showed up in far-from-equilibrium conditions [8,9].…”
Section: From Ohmic To Saturation Regimementioning
confidence: 95%
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“…This process appears to be much more efficient than the one occurring in the ohmic regime. It explains why, at room-temperature experiments of photoexcitation of HEMTs, the plasma modes are more easily showed up in far-from-equilibrium conditions [8,9].…”
Section: From Ohmic To Saturation Regimementioning
confidence: 95%
“…Here e is the elementary charge, E is the electric field component along the channel, 0 is the equilibrium mean energy, ε s and ε c are the dielectric constants of, respectively, the Schottky layer (for the case of a HEMT or (103) a MESFET) or the oxide layer (for the case of a MOS-FET), d is the gate-to-channel distance, δ is the channel thickness, N D is the effective donor concentration in the channel [9]. The velocity and energy relaxation rates ν v , ν , the electron effective mass m * , the velocity variance δv 2 and the energy-velocity covariance δvδ depend on the local mean energy and they were calculated by a Monte Carlo simulation of InGaAs bulk material.…”
Section: Theoretical Modelmentioning
confidence: 99%
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“…In this case,∆ V g = 0,f = 0 and G 0 is taken equal to 1 × 10 27 cm −3 /s which corresponds to typical conditions of photomixing experiments [5]. The harmonic and average photoresponses are reported on Fig.…”
Section: Optical Excitationmentioning
confidence: 99%