“…Here e is the elementary charge, E is the electric field component along the channel, 0 is the equilibrium mean energy, ε s and ε c are the dielectric constants of, respectively, the Schottky layer (for the case of a HEMT or (103) a MESFET) or the oxide layer (for the case of a MOS-FET), d is the gate-to-channel distance, δ is the channel thickness, N D is the effective donor concentration in the channel [9]. The velocity and energy relaxation rates ν v , ν , the electron effective mass m * , the velocity variance δv 2 and the energy-velocity covariance δvδ depend on the local mean energy and they were calculated by a Monte Carlo simulation of InGaAs bulk material.…”