Plasma wave oscillations in nanometer field effect transistors for terahertz detection and emission

Abstract

The channel of a field effect transistor can act as a resonator for plasma waves propagating in a two-dimensional electron gas. The plasma frequency increases with reduction of the channel length and can reach the terahertz (THz) range for nanometer size transistors. Recent experimental results show these transistors can be potential candidates for a new class of THz detectors and emitters. This work gives an overview of our recent relevant experimental results. We also outline unresolved problems and questions concerning THz detection and emission by nanometer transistors.

Femtosecond-Long Pulse-Based Modulation for Terahertz Band Communication in Nanonetworks

“…More recently, compact signal generators are being developed by using a single HEMT based on III-V compound semiconductors (e.g., Gallium Nitride) as well as graphene [10], [11]. In particular, it has been shown that SPP waves at Terahertz Band frequencies can be excited in the channel of a HEMT with nanometric gate length by means of either electrical or optical pumping.…”

“…Alternatively, the same HEMT-based structure discussed in transmission, has been proposed for the detection of Terahertz Band signals [10], [11]. The injection of a plasmonic current in the channel of the HEMT results into electrons being pushed from the source to the drain.…”

“…Nano-antennas are just tens of nanometers wide and few micrometers long, and can potentially be easily integrated in nano-devices. 0090-6778/14$31.00 c 2014 IEEE In this same direction, compact Terahertz Band plasmonic signal generators and detectors are being developed [10], [11]. Contrary to classical Terahertz Band radiation sources, which usually require high power bulky devices and sophisticated cooling systems [12], solid-state Terahertz Band emitters can electronically excite SPP waves at Terahertz Band frequencies from a compact structure built on a High Electron Mobility Transistor (HEMT) based on semiconductor materials.…”

Viscous hydrodynamic model of non-linear plasma oscillations in two-dimensional gated conduction channels and application to the detection of terahertz signals

“…The boundary conditions are U(0,t) = U 0 + U a cos(ωt) at the source side of the channel and zero current at the drain side, j(L,t) = 0. In the detector mode, the time-harmonic part is induced by the external radiation (1)(2)(3)(4)(5)(6)(7). Here the analysis is restricted to a one-dimensional flow that is uniform in the transverse channel direction:…”

Field effect transistors for terahertz detection - silicon versus III–V material issue

“…More information on the state of the art of the FETs as emitters and detectors of THz radiation can be found in re− view papers [8,9]. Here, we concentrate only an overview of a few recent results concerning THz detection.…”