Field effect transistors for terahertz detection - silicon versus III–V material issue

Knap, W.; Videlier, H.; Nadar, S.; Coquillat, Dominique; Dyakonova, N.; Теппе, Ф.; Białek, M.; Grynberg, M.; Karpierz, K.; Łusakowski, J.; Nogajewski, Karol; Seliuta, D.; Kašalynas, Irmantas; Valušis, Gintaras

doi:10.2478/s11772-010-1018-7

Cited by 10 publications

(4 citation statements)

References 15 publications

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“…This can be easily understood by analyzing Eq. (12). At high gate voltages, V g À U th > 0, the channel resistance is small, the loading effect is negligible, and the measured voltage signal V % DU does not depend on Z L .…”

Section: Resultsmentioning

confidence: 89%

“…1(b)) can also be explained using Eqs. (12) and (13). At large V g , we have V % DU and the signal phase is zero.…”

Section: Resultsmentioning

confidence: 93%

“…Field effect transistors (FETs) were found to be efficient terahertz (THz) detectors. [1][2][3][4][5][6][7][8][9][10][11][12] The phenomena can be described using the Dyakonov-Shur theory 11,13,14 in terms of the excitation of the 2-dimensional electron plasma in the transistor channel by the incoming THz radiation. When a THz field is applied between the gate and the source terminal of the transistor, it modulates at the same time the carrier velocity and the carrier density.…”

mentioning

confidence: 99%

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Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects

Sakowicz

Lifshits

Klimenko

et al. 2011

Journal of Applied Physics

Self Cite

158

103

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We study the broadband photovoltaic response of field effect transistors on terahertz radiation. A simple physical analytical model of the response is developed. It is based on plasma density perturbation in the transistor channel by the incoming terahertz radiation. The model shows how the non-resonant detection signal is related to static (dc) transistor characteristics. We analyze loading effects related to capacitive, inductive, and resistive coupling of the detector to the read-out circuit as a function of modulation frequencies and loading resistors. As we show, the proposed physical model completed by loading effects fully describes the experimental results on the non-resonant sub-terahertz detection by all studied III-V (GaAs, GaN) and silicon based transistors. Field effect transistors were recently proposed as the best terahertz detecting pixels for fabrication of low cost focal plane arrays for terahertz imaging. This article gives prospects for electrical simulation of these transistors and their optimal integration in the focal plane arrays.

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Section: Resultsmentioning

confidence: 89%

“…1(b)) can also be explained using Eqs. (12) and (13). At large V g , we have V % DU and the signal phase is zero.…”

Section: Resultsmentioning

confidence: 93%

mentioning

confidence: 99%

See 1 more Smart Citation

Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects

Sakowicz

Lifshits

Klimenko

et al. 2011

Journal of Applied Physics

Self Cite

158

103

View full text Add to dashboard Cite

show abstract

“…The THz radiation is widely used for non-destructive medical scanning, security screening, quality control, atmospheric investigation, space research, for studies of works in art, etc. [1][2][3][4][5][6][7][8]. One of the key components of any application is the THz radiation source.…”

Section: Introductionmentioning

confidence: 99%

SiC and GaAs emitters as selective terahertz radiation sources

Požela¹,

Širmulis²,

Požela³

et al. 2013

Lith. J. Phys.

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Two types of electrically heated THz radiation emitters: (1) the Globar-SiC (black body), and (2) the highly doped GaAs plate, are considered as selective high-power terahertz (THz) radiation sources. The spectrum of the new type GaAs emitter in the 9-15 THz frequency range is determined by oscillations of free electron plasma and coupled plasmon-phonons. The thermally stimulated resonant emission of surface plasmon-phonon polaritons is experimentally observed. The radiative modes of coupled surface plasmon-phonon polaritons in the n + -GaAs plate are identified.

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2D THz Optoelectronics

Mittendorff

Winnerl

Murphy

2020

Advanced Optical Materials

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The terahertz (THz) region of the electromagnetic spectrum spans the gap between optics and electronics and has historically suffered from a paucity of optoelectronic devices, in large part because of inadequate optical materials that function in this spectral range. 2D materials, including graphene and a growing family of related van der Waals materials, have been shown to exhibit unusual optical and electrical properties that can enable diverse new applications in the THz regime. In this review, some of the unusual properties of 2D materials that make them promising for THz applications are explained, the recent work in the field of 2D THz optoelectronics is summarized, and the challenges and opportunities that await this promising new field are outlined.

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Field effect transistors for terahertz detection - silicon versus III–V material issue

Cited by 10 publications

References 15 publications

Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects

Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects

SiC and GaAs emitters as selective terahertz radiation sources

2D THz Optoelectronics

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