2018 IEEE 68th Electronic Components and Technology Conference (ECTC) 2018
DOI: 10.1109/ectc.2018.00069
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Plasma Treatment for Fluxless Flip-Chip Chip-Joining Process

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Cited by 10 publications
(2 citation statements)
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“…Godard et al [4] used Ar/H2 plasma because the generated hydrogen radicals act as reducing agents. The plasma treatment was performed in vacuum.…”
Section: Related Results In the Literaturementioning
confidence: 99%
“…Godard et al [4] used Ar/H2 plasma because the generated hydrogen radicals act as reducing agents. The plasma treatment was performed in vacuum.…”
Section: Related Results In the Literaturementioning
confidence: 99%
“…Important benefits -regarding the manufacturing industry -are the possibilities of automatization and in-line installation [5]. Forming gas that contains 5 vol% hydrogen and 95 vol% nitrogen was used for plasma generation, utilizing the reducing properties of hydrogen to remove the oxide layer from the metal surfaces [6].…”
Section: Introductionmentioning
confidence: 99%