2016
DOI: 10.1016/j.abb.2016.04.001
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Plasma-on-chip device for stable irradiation of cells cultured in media with a low-temperature atmospheric pressure plasma

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Cited by 11 publications
(12 citation statements)
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“…High-voltage square pulses (with a fixed voltage of 7 kV p-p , peak to peak, and a fixed frequency of 10 kHz) were applied to the electrode. For comparison, the typical operation conditions of the Plasma-on-Chip device were 0.5–1.0 slpm of He and 0.5–1.0 kV at a frequency of 1–10 kHz 33 34 . In the cases involving the Plasma-on-Chip , or those using NTAPPJ and the through-hole devices, reactive species were generated by the interactions between the emerging He plasma and the ambient air.…”
Section: Resultsmentioning
confidence: 99%
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“…High-voltage square pulses (with a fixed voltage of 7 kV p-p , peak to peak, and a fixed frequency of 10 kHz) were applied to the electrode. For comparison, the typical operation conditions of the Plasma-on-Chip device were 0.5–1.0 slpm of He and 0.5–1.0 kV at a frequency of 1–10 kHz 33 34 . In the cases involving the Plasma-on-Chip , or those using NTAPPJ and the through-hole devices, reactive species were generated by the interactions between the emerging He plasma and the ambient air.…”
Section: Resultsmentioning
confidence: 99%
“…It is readily understood that the plasma affects cells in the vicinity of the treated area. Figure 1 illustrates what occurs when the plasma irradiation area is reduced to a size as small as a cell (plasma ≒ cell) or smaller (plasma < cell) 30 31 32 33 34 . In these cases, we expect that the plasma treatment activates or inactivates biological reactions at the single-cell level.…”
mentioning
confidence: 99%
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