IEEE Trans. Electron Devices
 1998
DOI: 10.1109/16.678562
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Plasma ion implantation hydrogenation of poly-Si CMOS thin-film transistors at low energy and high dose rate using an inductively-coupled plasma source

Shu Qin
1
,
Yuanzhong Zhou
2
,
T. Nakatsugawa
3
et al.
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