Doping concentration evaluation using plasma propagation models in plasma immersion ion implantation (PIII) system

Gupta, Dinesh C.; Prasad, B.; George, P.J.

doi:10.1016/s0038-1101(03)00299-5

Cited by 2 publications

(1 citation statement)

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“…This phase of sheath expansion plays a crucial role in determining the ion flux to the target. Subsequently, the sheath edge recedes and a nonuniform time varying dynamic sheath expands with time, which contributes DA VID PUBLISHING D the major part of the total doping concentration, implanted into the target [10].…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study of Dynamic Sheath Analytical Models of a Multispecies Plasma Immersion Ion Implantation System in Collisionless Regime

Gupta¹,

Jogi²,

George³

2013

JMSE-B

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Plasma immersion ion implantation (PIII), a high-dose rate implantation technique, has vast applications in the area of semiconductor electronics, in surface modifications of biomaterials and even in the development of various nano-structures. In this technique, the target is immersed in plasma and the implantation is done by accelerating the ions with a negative pulse voltage, applied to the target. There have been continuous efforts for the development of dynamic sheath models for a PIII system in estimating the impurities to be doped. In this paper, an effort has been made to compare the two models developed for a multispecies collisionless PIII system, one being developed by Qin, et. al. and the other being suggested by the author. To illustrate the comparative study of these two models, various parameters have been computed and compared by considering a mixed plasma of He and Ar species, when a negative pulse of potential 15 KV and with pulse time of 10 µs is applied to the sample.

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Section: Introductionmentioning

confidence: 99%