Plasma Ion-Doping Technique with 20 kHz Biased Electron Cyclotron Resonance Discharge

Abstract

In a recent paper a variational form of the continuum distorted wave approximation was used to calculate a variational expression for the cross section for resonant ground state capture at very high velocities in proton-hydrogen atom collisions. In this paper the previous work is extended in that the cross section is calculated by first calculating a variational expression for the transition amplitude. The resulting cross section is found to have the form o = 26n.yt'-"(na;), where the velocity U is in atomic units, y = 4 exp(20)E2(2.0), and where EZ(z) is the exponential function. This cross section differs from the high velocity limit of the cross section obtained in the second Born approximation, and in any other second order approximation. However, the present approximation is thought to be poor at large impact parameters so that the above result should probably not be taken too seriously.

Co-gas impact of B2H6 plasma diluted with helium on the plasma doping process in a pulsed glow-discharge system

“…[4][5][6] In contrast to hydrogen or other gas dilutions, [9][10][11] a small fraction of He + ions in the total ion species shows advantages for PLAD processing. The reduction of the deposition will increase overall manufacture time between failure of plasma doping equipment by decreasing cleaning cycles and increasing throughput.…”

“…[7][8][9][10][11][12] For example, B 2 H 6 / He, 7,8 B 2 H 6 /H 2 , 9 PH 3 /H 2 , and PH 3 / He, 10,11 with different gas ratios ͑from 0.5% to 10%͒, have been investigated in PIII doping processes. [7][8][9][10][11][12] For example, B 2 H 6 / He, 7,8 B 2 H 6 /H 2 , 9 PH 3 /H 2 , and PH 3 / He, 10,11 with different gas ratios ͑from 0.5% to 10%͒, have been investigated in PIII doping processes.…”

Hydrogen Etching Effects During Plasma Doping Processes and Impact on Shallow Junction Formation

“…Si + 4H --> SiH 4 (1) and Because silane (SiHl) is a volatile reaction by-product, the etching occurs continuously. The inverse of this reaction occurs in the typical silane CVD process.…”

“…Plasma ion implantation (PII) is a promising method for semiconductor doping [1]- [3] including shallow junction formation and hydrogenation of thin film transistors (TFTs) for flat panel displays [4]. PII doping has advantages over conventional ion implantation for such applications because of its higher dose rate at low energy, independent of implant area.…”