Plasma-Induced Nonvolatile Resistive Switching with Extremely Low SET Voltage in TiO_xF_y with AgF Nanoparticles

Abstract

Low power consumption is crucial for the application of resistive random access memory. In this work, we present the bipolar resistive switching in an Ag/TiOF/Ti/Pt stack with extremely low switch-on voltage of 0.07 V. Operating current as low as 10 nA was also obtained by conductive atomic force microscopy. The highly defective TiOF layer was fabricated by plasma treatment using helium, oxygen, and carbon tetrafluoride orderly. During the electroforming process, AgF nanoparticles were formed due to the diffusion of Ag which reacted with the adsorbed F in the TiOF layer. These nanoparticles are of great importance to resistive switching performance because they are believed to be conductive phases and become part of the conducting path when the sample is switched to a low-resistance state.

Recent progress in bio-voltage memristors working with ultralow voltage of biological amplitude

“…Perovskites, such as CsSnI 3 , 32 CsPbI 3 , 33,34 MAPbI 3 , 35 Cs 3 Bi 2 I 9 -CsPbI 3 , 36 and CH 3 NH 3 PbI 3 , 37 have been frequently used to construct BMRs. Oxides, including SiO 2 , 38 TiO, 16,39 TaO, 40–42 Zr 0.5 Hf 0.5 O 2 , 43 and ITO, 44–46 are another frequent category employed as the dielectrics in BMRs. Sometimes, an oxidized interface in a non-oxide dielectric layer is also found to be key to achieving bio-voltage switching.…”

“…For example, AgF nanoparticles were introduced in the TiO x F y dielectric in a BMR based on a Ag/TiO x F y /Ti/Pt structure. 39 These AgF nanoparticles were suggested to serve as passing docks to facilitate and guide Ag + migration. Similarly, graphene oxide quantum dots were introduced in the Zr 0.5 Hf 0.5 O 2 dielectric in a Ag-based BMR.…”

Applications of biomemristors in next generation wearable electronics

“…others (CsPbCl x Br 3Àx , 42 C 3 N 4 , 43 TiO x F y , 44 etc.). In recent years, some organic-inorganic material heterojunctions (polymethylmethacrylate/Cs 3 Cu 2 I, 45 poly{2,2-(2,5-bis(2-octyldodecyl)-3,6dioxo-2,3,5,6-tetrahydropyrrolo [3,4- 46 TiO 2 /Cs 0.05 -(FA x MA 1Àx ) 0.95 PbBr y I 3Ày , 47 etc.)…”

“…), low dimensional materials (PbS quantum dots, 39 Ag@AgO x nanowires, 40 graphene oxidized, 41 etc. ) and others (CsPbCl x Br 3− x , 42 C 3 N 4 , 43 TiO x F y , 44 etc. ).…”

Progress and perspectives in dry processes for emerging multidisciplinary applications: how can we improve our use of dry processes?

“…Among resistive switching materials, transition metal oxides are promising candidates for large-area deposition using CVD. [193][194][195] The challenges in the science and technology for emerging materials are facing the problems of dimensional control and material damage reduction in the same way as before. To overcome these, further understanding of CVD is necessary.…”