Plasma hydrogenation of strained Si∕SiGe∕Si heterostructure for layer transfer without ion implantation

Abstract

Articles you may be interested inControlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer Appl. Phys. Lett. 97, 031917 (2010) Relaxed graded SiGe donor substrates incorporating hydrogen-gettering and buried etch stop layers for strained silicon layer transfer applications

Ion-irradiation-induced athermal annealing of helium bubbles in SiC

“…Gas atom filled bubble formation in a defective zone has been studied extensively. For example, in a Si/ Si structure containing a defective interface, or in a Si/SiGe/Si supperlattice containing a buried compressively strained layer, H ion irradiation can lead to preferential platelet formation at highly strained region [17].…”

Applications of plasma-based technology to microelectronics and biomedical engineering

“…In spite of the small mass of hydrogen ions, implantation inevitability causes substrate damage which can adversely impact device yields and high-dose hydrogen implantation also tends to be costly. We have thus explored the possibility of using low-energy hydrogen plasma hydrogenation instead of hydrogen ion implantation to perform ion-cutting and layer transfer to produce SOI [12,13]. Boron ion implantation is used to introduce H-trapping centers into Si wafers to illustrate the idea.…”

Microwave enhanced ion-cut silicon layer transfer

“…10 More recent work has centered on alternative methods to ion implantation which result in the same product, without large amounts of implantinduced damage. 11 The central theme in such investigations is that implant-induced lattice damage is undesirable, and unless polishing or etch techniques are used, mostly unavoidable.…”