Microwave enhanced ion-cut silicon layer transfer

Abstract

Polycrystalline silicon layer transfer by ion-cut Appl. Phys. Lett. 82, 1544Lett. 82, (2003 Microwave heating has been used to decrease the time required for exfoliation of thin single-crystalline silicon layers onto insulator substrates using ion-cut processing. Samples exfoliated in a 2.45 GHz, 1300 W cavity applicator microwave system saw a decrease in incubation times as compared to conventional anneal processes. Rutherford backscattering spectrometry, cross sectional scanning electron microscopy, cross sectional transmission electron microscopy, and selective aperture electron diffraction were used to determine the transferred layer thickness and crystalline quality. The surface quality was determined by atomic force microscopy. Hall measurements were used to determine electrical properties as a function of radiation repair anneal times. Results of physical and electrical characterizations demonstrate that the end products of microwave enhanced ion-cut processing do not appreciably differ from those using more traditional means of exfoliation.

Rapid Fabrication of 100 nm or Thinner Fully Depleted Silicon-on-Insulator Materials for Ultralow Energy Consumption

“…We interpret the mechanism in the following way: at the beginning of the microwave process, adiabatic heating was created to strictly limit the out-diffusion of the hydrogen forming the nano voids. As the irradiation continued, the adiabatic process became isothermal at 350–400 °C, which promoted the growth of platelets and cracks. The depth of the concentration peak is 375 nm (Figure a), which aligns with the location of the layer splitting (Figure a).…”