2009
DOI: 10.1016/j.tsf.2009.05.065
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Plasma focus assisted carburizing of aluminium

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Cited by 33 publications
(18 citation statements)
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“…This condition was carried out for all experiments. Carburizing started immediately after CH 4 and H 2 mixture were injected into the chamber with the total pressure of about 2 torr. The ratio of the gases was the same in all experiments and was 20% CH 4 and 80% H 2 .…”
Section: Methodsmentioning
confidence: 99%
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“…This condition was carried out for all experiments. Carburizing started immediately after CH 4 and H 2 mixture were injected into the chamber with the total pressure of about 2 torr. The ratio of the gases was the same in all experiments and was 20% CH 4 and 80% H 2 .…”
Section: Methodsmentioning
confidence: 99%
“…Carburizing started immediately after CH 4 and H 2 mixture were injected into the chamber with the total pressure of about 2 torr. The ratio of the gases was the same in all experiments and was 20% CH 4 and 80% H 2 . The applied voltage was varied in plasma carburizing between 700 and 900 v. All the condition is listed in Table 2.…”
Section: Methodsmentioning
confidence: 99%
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“…The simplicity in operation and high fluences of emitted ions with wide energy range are making the plasma focus a promising device for material processing. Another unique feature of the plasma focus is that it may be employed for the surface modification of insulator and semiconductor [2] as the target needs not to be electrically conductive [2]. In recent years, various techniques such as laser surface treatment, ion implantation, plasma immersion ion implantation, chemical vapor deposition, physical vapor deposition, ion assisted surface modification, phase changes of thin films, and thin film deposition such as diamond like coatings have been employed for processing of materials.…”
Section: Introductionmentioning
confidence: 99%