Plasma fluorination of polyimide thin films

Endo, Kazuhiko; Tatsumi, Toru

doi:10.1116/1.580857

Cited by 13 publications

(2 citation statements)

References 19 publications

(15 reference statements)

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“…We note that trap type SCLC mechanism has been reported for vinyl pyridine grafted polyethylene, 40 low density polyethylene, 46 and polyethylene. 47 Endo and Tatsumi, 48 in an article dedicated to the study of the electrical conduction mechanism of fluorinated polyimide thin films, found that their films obeyed an ionic conduction mechanism resulting from the presence of hydrogen in the films. Ionic conduction is unlikely for our films as XPS and FTIR analyses revealed ͑see Part I͒ a lack of H ϩ ions which could act as carriers for ionic conduction.…”

Section: Leakage Currentmentioning

confidence: 98%

Amorphous fluorocarbon polymer (a-C:F) films obtained by plasma enhanced chemical vapor deposition from perfluoro-octane (C8F18) vapor. II. Dielectric and insulating properties

Biloiu

Sakai

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Amorphous fluorocarbon polymer films (a-C:F) have been grown by plasma enhanced chemical vapor deposition from a new precursor, namely perfluoro-octane (C8F18) vapor. The dielectric and insulating properties of the films have been assessed by means of capacitance–voltage and current–voltage characteristics, breakdown voltage measurements, scanning electron microscopy, and ellipsometric analyses. In the investigated frequency range, 120 Hz–1 MHz, the films have a low dielectric constant (≈2.4) and a low dielectric loss (⩽3×10−2). The electrical conduction mechanism is ohmic in the weak electric field regime, with a bulk resistivity of 4×1015 Ω cm, and a trap modulated space charge limited conduction in the strong electric field regime. For a film thickness between 1 and 12 μm, the dielectric strength varies with film thickness according to EB∼h−0.53. For a film thickness of 1 μm the film dielectric strength was 2.7 MV/cm while for 12 μm it decreased to 0.9 MV/cm. Measurements of the breakdown voltage in nitrogen gas in the low pressure regime between a-C:F coated cathode and copper anode showed an enhancement of the breakdown voltage by a factor of 2.5 with respect to the case of copper–copper electrodes.

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Section: Leakage Currentmentioning

confidence: 98%

Amorphous fluorocarbon polymer (a-C:F) films obtained by plasma enhanced chemical vapor deposition from perfluoro-octane (C8F18) vapor. II. Dielectric and insulating properties

Biloiu

Sakai

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…There is an extensive research effort on understanding and solving problems associated with material, production and integration of low-k polymer ILDs [1][2][3][4][5][6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Damage to sub-half-micron metal-oxide-silicon field-effect transistors from plasma processing of low- k polymer interlayer dielectrics

Trabzon¹,

Awadelkarim²

2000

Semicond. Sci. Technol.

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We report on the effects of via plasma etching of low-dielectric-constant (low-k) polymers, used as interlayer dielectrics (ILDs), on the characteristics of sub-half-micron n-channel metal-oxide-silicon field-effect transistors (MOSFETs). The low-k polymers investigated are benzocylobutene and fluorinated poly-arylene-ether. The MOSFETs employed are made sensitive to via etching by incorporating an array of either 58 × 58 or 183 × 213 via holes to the gate electrode. We have found that the via etching of the polymer ILD damages the MOSFET as witnessed by the observed degradation in the transistor's parameter. The damage incurred by the MOSFET is of a charging type and is caused by plasma-induced stress current flowing into the gate oxide and oxide-Si interface through regions in the polymer ILD that are rendered leaky by the via etching plasma. We have observed that the inclusion of an insulating layer, such as Si 3 N 4 , can significantly inhibit the damaging effects of the via etch. Annealing at ∼350 • C is found to eliminate the via-etch-induced damage and to improve the MOSFET's parameters.

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Synthesis and Characterization of Nano-Porous Oxidized Silica Film with Low Dielectric Constant

Wang

Zhang

Song

et al. 2015

Advanced Graphic Communications, Packaging Technology and Materials

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Plasma fluorination of polyimide thin films

Cited by 13 publications

References 19 publications

Amorphous fluorocarbon polymer (a-C:F) films obtained by plasma enhanced chemical vapor deposition from perfluoro-octane (C8F18) vapor. II. Dielectric and insulating properties

Amorphous fluorocarbon polymer (a-C:F) films obtained by plasma enhanced chemical vapor deposition from perfluoro-octane (C8F18) vapor. II. Dielectric and insulating properties

Damage to sub-half-micron metal-oxide-silicon field-effect transistors from plasma processing of low- k polymer interlayer dielectrics

Synthesis and Characterization of Nano-Porous Oxidized Silica Film with Low Dielectric Constant

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