Plasma etching: principles, mechanisms, application to micro- and nano-technologies

Cardinaud, Christophe; Peignon, M. C.; Tessier, Pierre-Yves

doi:10.1016/s0169-4332(00)00328-7

Cited by 168 publications

(82 citation statements)

References 28 publications

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“…Monitoring and controlling the surface temperature of objects in plasma-processes like etching or thin film deposition is crucial for the optimization of technical applications [1,2]. On the other hand, the potential for obtaining the temperature of surfaces in a plasma gives access to the energetic conditions at the surface, which are determined by a balance of several contributions of energy gain and loss [3,4].…”

Section: Introductionmentioning

confidence: 99%

Temperature of Particulates in Low‐Pressure rf‐Plasmas in Ar, Ar/H₂ and Ar/N₂ Mixtures

Maurer

Basner

Kersten

2010

Contrib. Plasma Phys.

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The temperature of micro-particles, confined in the sheath of a capacitively coupled low-pressure rf-discharge in front of an Adaptive Electrode, has been measured for different plasma conditions and in different gas mixtures by using temperature-dependent optical features of the particles. In the range from 10 to 50 Pa, the temperature increase with rising discharge power is found to be more pronounced at low pressures than at higher pressures. Addition of molecular gases to the argon-plasma may either result in a temperature decrease (as in the case of nitrogen) or in additional heating of the particles (when hydrogen is added). The measured particle temperature is discussed with respect to appearing plasma-particle interactions which contribute to the particle's energy balance.

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Section: Introductionmentioning

confidence: 99%

Temperature of Particulates in Low‐Pressure rf‐Plasmas in Ar, Ar/H₂ and Ar/N₂ Mixtures

Maurer

Basner

Kersten

2010

Contrib. Plasma Phys.

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“…The application of radiofrequency to the sample holder generates a negative DC bias that attracts these positive ions, causing ionic bombardment on the surface of the substrate and reactive ion etching 28,34 . For the sulfur hexafluoride gas (SF 6 ) treatments, the base pressure of the system reached 0.05 Torr, and the work pressure was set to 0.5 Torr.…”

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confidence: 99%

Morphological and Chemical Effects of Plasma Treatment with Oxygen (O2) and Sulfur Hexafluoride (SF6) on Cellulose Surface

et al. 2018

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Cellulose is a polymer widely available in nature, however its applications may be restrict due to its hydrophilic character. The creation of hierarchical structures on the surface is one of the required factors to obtain the hydrophobicity of this material. In order to compare the morphological and chemical effects caused by the action of different gases in the creation of nanostructures on the cellulose surface, samples were exposed to oxygen (O 2 ) and sulfur hexafluoride (SF 6 ) plasma treatments. The changes in morphology after treatment prove that both the gases were able to create similar nanostructures in the material. The analysis of elemental composition and identification of functional groups on the sample surface showed that chemical modifications occurred differently for each treatment. Contact angle measurements revealed that samples treated by O 2 plasma remained hydrophilic, whereas low receptivity to polar (θ > 120º) and non-polar (θ > 100º) liquids was observed for samples exposed to SF 6 plasma.

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“…According to this manufacturing concept, the smaller the elements of the circuit are, the higher is the computing power of the system. The submicron structures typically found in microelectronics components can only be economically produced using different plasma processes [15,16]. The nonequilibrium generation of reactants by plasmas enables the selective etching, deposition, implantation, removal, and cleaning of materials and surfaces required to fabricate microelectronics devices [17].…”

Section: Introductionmentioning

confidence: 99%

Top down nano technologies in surface modification of materials

Radjenović

Radmilović-Radjenović

2011

Open Physics

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Abstract:This article contains a broad overview of etch process as one of the most important top-down technologies widely used in semiconductor manufacturing and surface modification of nanostructures. In plasma etching process, the complexity comes from the introduction of new materials and from the constant reduction in dimensions of the structures in microelectronics. The emphasis was made on two types of etching processes: dry etching and wet etching illustrated by three dimensional (3D) simulation results for the etching profile evolution based on the level set method. The etching of low-k dielectrics has been demonstrated via modelling the porous materials. Finally, simulation results for the roughness formation during isotropic etching of nanocomposite materials as well as smoothing of the homogeneous materials have also been shown and analyzed. Simulation results, presented here, indicate that with shrinking microelectronic devices, plasma and wet etching interpretative and predictive modeling and simulation have become increasingly more attractive as a tool for design, control and optimization of plasma reactors. PACS (2008):81.05. Rm, 85.40.Hp, 85.85.+j, 87.10.Ed

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Plasma etching: principles, mechanisms, application to micro- and nano-technologies

Cited by 168 publications

References 28 publications

Temperature of Particulates in Low‐Pressure rf‐Plasmas in Ar, Ar/H₂ and Ar/N₂ Mixtures

Temperature of Particulates in Low‐Pressure rf‐Plasmas in Ar, Ar/H₂ and Ar/N₂ Mixtures

Morphological and Chemical Effects of Plasma Treatment with Oxygen (O2) and Sulfur Hexafluoride (SF6) on Cellulose Surface

Top down nano technologies in surface modification of materials

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Plasma etching: principles, mechanisms, application to micro- and nano-technologies

Cited by 168 publications

References 28 publications

Temperature of Particulates in Low‐Pressure rf‐Plasmas in Ar, Ar/H2 and Ar/N2 Mixtures

Temperature of Particulates in Low‐Pressure rf‐Plasmas in Ar, Ar/H2 and Ar/N2 Mixtures

Morphological and Chemical Effects of Plasma Treatment with Oxygen (O2) and Sulfur Hexafluoride (SF6) on Cellulose Surface

Top down nano technologies in surface modification of materials

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Temperature of Particulates in Low‐Pressure rf‐Plasmas in Ar, Ar/H₂ and Ar/N₂ Mixtures

Temperature of Particulates in Low‐Pressure rf‐Plasmas in Ar, Ar/H₂ and Ar/N₂ Mixtures