Plasma etching of III–V semiconductors in BCl3 chemistries: Part I: GaAs and related compounds

Lee, J. W.; Hong, Jung‐Wuk; Lambers, E. S.; Abernathy, C. R.; Pearton, S. J.; Hobson, W. S.; Ren, F.

doi:10.1007/bf02766812

Cited by 21 publications

(9 citation statements)

References 22 publications

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“…Most of the studies of anisotropic GaP dry-etching in the literature have focused on increasing the etch rate and maintaining a smooth top-surface morphology [30]- [37]. In these studies, either chlorine-containing species, such as Cl 2 or BCl 3 [31], [35], [37], [38], or mixtures of H 2 and CH 4 [32], [34], or a combination of both [36] have been used. Inclusion of Ar and N 2 , gases which are expected to contribute more to physical as opposed to chemical etching, has also been investigated [31], [35], [37], [39].…”

Section: B Gap Patterningmentioning

confidence: 99%

Gallium Phosphide-on-Silicon Dioxide Photonic Devices

Schneider

Welter

Baumgartner

et al. 2018

J. Lightwave Technol.

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The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here, we present the first GaP photonic devices on SiO 2 . The process exploits direct wafer bonding of a GaP/Al x Ga 1 −x P/GaP heterostructure onto a SiO 2 -on-Si wafer followed by the removal of the GaP substrate and the Al x Ga 1 −x P stop layer. Photonic devices such as grating couplers, waveguides, and ring resonators are patterned by inductively coupled-plasma reactive-ion etching in the top GaP device layer. The peak coupling efficiency of the fabricated grating couplers is as high as −4.8 dB. Optical quality factors of 20 000 as well as second-and third-harmonic generation are observed with the ring resonators. Because the large bandgap of GaP provides for low two-photon absorption at telecommunication wavelengths, the high-yield fabrication of GaP-on-insulator photonic devices enabled by this work is especially interesting for applications in nanophotonics, where high quality factors or low mode volumes can produce high electric field intensities. The large bandgap also enables integrated photonic devices operating at visible wavelengths.

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Section: B Gap Patterningmentioning

confidence: 99%

Gallium Phosphide-on-Silicon Dioxide Photonic Devices

Schneider

Welter

Baumgartner

et al. 2018

J. Lightwave Technol.

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“…Boron trichloride (BCl 3 ) is widely used in the plasma etching of semiconductors and metals [1][2][3][4][5] and also to dope or deposit boron [6]. A recent report from the National Research Council addressing the "Database Needs for Modeling and Simulation of Plasma Processing" [7] highlighted the lack of reliable partial ionization cross-sections (PICSs) for industrially important molecules such as BCl 3 .…”

Section: Introductionmentioning

confidence: 99%

The formation of boron containing fragment ions from the ionization of BCl3

Love

Price

2004

International Journal of Mass Spectrometry

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“…In this study we used different etch gases under varying etch conditions. Etching of GaAs is usually done in chlorinebased plasma chemistry, most often using Cl 2 and/or BCl 3 [6][7][8][9][10][11]. BCl 3 is known to be an effective getter of water vapor and will immediately remove the native oxide layer on the GaAs surface, which makes BCl 3 suitable for reproducible GaAs etching.…”

Section: ã Etching Experimentsmentioning

confidence: 99%

<title>Transfer of micro-optical structures into GaAs and diamond</title>

Karlsson

Nikolajeff

2001

SPIE Proceedings

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Transfer of continuous-relief micro-optical structures from resist into GaAs, by use of direct-write electron-beam lithography followed by dry etching in an inductively coupled plasma, is demonstrated. A BCl 3 /Ar chemistry has been found to give satisfactory results, N 2 and Cl 2 have been added to change the selectivity between GaAs and e-beam resist. The transfer process generates smooth etched structures. Distortion of the diffractive structures in the transfer process has been examined. Blazed gratings with a period of 10 µm have been optically evaluated using a 940 nm VCSEL. The diffraction efficiency was 67% in the first order with a theoretical value of 87%. Also, simulations of the optical performance for the transfered diffractive elements have been made using Fourier transform of the grating profile. For integrating the optical element with VCSELs there are several possible alternatives. We have fabricated the optical structure on the same substrate that is used for the VCSEL and characterization is presently under way. We also show our initial results on transfer of micro-optical structures from resist into diamond using dry etching.

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Plasma etching of III–V semiconductors in BCl3 chemistries: Part I: GaAs and related compounds

Cited by 21 publications

References 22 publications

Gallium Phosphide-on-Silicon Dioxide Photonic Devices

Gallium Phosphide-on-Silicon Dioxide Photonic Devices

The formation of boron containing fragment ions from the ionization of BCl3

<title>Transfer of micro-optical structures into GaAs and diamond</title>

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