Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition

Fang, Zhijia; Wang, X. L.; Han, Jung; Khan, Farid; Adesida, I.

doi:10.1063/1.1560562

Cited by 89 publications

(79 citation statements)

References 17 publications

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“…It is emphasized that the capture kinetics for trap S3 is measured in the neutral region. Thus, we conclude that trap S3 in GaN on sapphire is dislocation-related defects, which is consistent with the previous report [9]. Moreover, this indicates that trap S3 is the acceptor-like defect.…”

Section: Resultssupporting

confidence: 90%

Evaluation of dislocation‐related defects in GaN using deep‐level transient spectroscopy

Tokuda

Matuoka

Yoshida

et al. 2007

Phys. Status Solidi (c)

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A method to extract the carrier capture kinetics of traps in the neutral region by isothermal deep-level transient spectroscopy using two sets of bias pulses was applied to the traps with similar energy levels around E c -0.6 eV in GaN grown by metalorganic chemical vapor deposition on GaN and sapphire substrates. The E c -0.6 eV trap in GaN on GaN is found to be the isolated point defects. The E c -0.6 eV trap in GaN on sapphire shows the logarithmic capture kinetics, expected for dislocation-related defects. This is ascribed to the difference in dislocation density between GaN on GaN and sapphire substrates.1 Introduction It is important to characterize deep-level defects in GaN since those act as trap and generation-recombination centers and affect device performance. It is expected that there are dislocation-related defects as well as point defects in GaN.Deep-level transient spectroscopy (DLTS) is a powerful tool to investigate traps in semiconductors [1] and possesses the ability to distinguish between point defects and dislocation-related defects by measuring the dependence of DLTS peak heights on filling pulse duration time [2,3]. The point defects exhibit the exponential carrier capture kinetics, while dislocation-related defects do the logarithmic filling time dependence due to the build-up of the coulombic barrier by trapped charges. However, the point defects within the so-called λ region [4] in the depletion region show the capture behavior over the wide range in filling time [5][6][7]. The carrier capture in the λ region must be removed from the total capture kinetics to study the dislocation-related defects by DLTS.In this work, a method to extract carrier capture kinetics of traps in the neutral region is applied to GaN. This method uses two sets of bias pulses at the isothermal DLTS mode.

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Section: Resultssupporting

confidence: 90%

Evaluation of dislocation‐related defects in GaN using deep‐level transient spectroscopy

Tokuda

Matuoka

Yoshida

et al. 2007

Phys. Status Solidi (c)

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“…Two defect traps are created: trap E (0.16 eV), which has been identified with the N vacancy V N [23], and trap A 2 (1.2 eV), which has an energy similar to that of trap A 1 , and may be related to the N interstitial N I . We have also found that traps E 1 , D, C, and A 1 grow under plasma-ion irradiation (not shown), indicating their defect natures [24]. Since traps E, E 1 , D, and C all grow under displacement-type irradiation and have similar energies, and since E has been positively identified with V N [23], we naturally identify each of these traps as either isolated V N (trap E), or V Nrelated complexes (traps E 1 , D, and C).…”

Section: Deep-level Transient Spectroscopy (Dlts): Trapsmentioning

confidence: 83%

Identification of donors, acceptors, and traps in bulk-like HVPE GaN

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Fang

Claflin

2005

Journal of Crystal Growth

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100

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“…These two traps are commonly observed in GaN on sapphire with various growth methods such as MBE and HVPE in addition to MOCVD [8][9][10][11]. From the previous possible identification [8][9][10][11], it is suggested that traps S1 (B1) and S3 (B2) might be assigned to the V N -V Ga pair and N Ga -related defect, respectively. The present result shows that these are also present in GaN grown homoepitaxially on GaN.…”

Section: Methodsmentioning

confidence: 96%