Y. Tokuda, Y. Matsuoka, H. Ueda, O. Ishiguro, N. Soejima, T. Kachi
Electron traps in n-type GaN layers grown homoepitaxially by MOCVD on free-standing GaN substrates have been characterized using DLTS for vertical Schottky diodes. Two free-standing HVPE GaN substrates (A and B), obtained from two different sources, are used. The Si-doped GaN layers with the thickness of 5 µm are grown on an area of 0.9 × 0.9 cm 2 of substrate A and on an area of 1 × 1 cm 2 of substrate B. Two traps labeled B1 (E c -0.23 eV) and B2 (E c -0.58 eV) are observed with trap B2 dominant in GaN on b…
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