1979
DOI: 10.1116/1.569958
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Plasma etching—A discussion of mechanisms

Abstract: Mechanisms in plasma etching

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Cited by 572 publications
(168 citation statements)
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“…investigations on plasma processes from literature. [207][208] 10 sccm oxygen flow significantly reduced the etching rates to 16 nm·min -1 (408 nm colloids) and 18 nm·min -1 (246 nm colloids).…”
Section: Effect Of Plasma Powermentioning
confidence: 99%
See 1 more Smart Citation
“…investigations on plasma processes from literature. [207][208] 10 sccm oxygen flow significantly reduced the etching rates to 16 nm·min -1 (408 nm colloids) and 18 nm·min -1 (246 nm colloids).…”
Section: Effect Of Plasma Powermentioning
confidence: 99%
“…The phenomenon is related to smaller etching rates of silicon dioxide compared to silicon that are reported for reactive ion beam etching experiments. [207] Figure 5.2.12. Effect of substrate material on the size-reduction process.…”
Section: Effect Of the Substratementioning
confidence: 99%
“…From the mid-1960s, the mechanisms of plasma etching were first introduced as a revolutionary technique for the fabrication of integrated circuit [46]. In the 1970s, it was widely accepted and expected to be an important fabrication technique in the industry of semiconductor and other applications requiring fine-line lithography [47]. In general, plasma etching undergoes a chemical reaction between the solid atoms from the substrate material and gas atoms from the gas etchant.…”
Section: Plasma Etchingmentioning
confidence: 99%
“…Then, the exposed oxidized silicon surface was etched by silicon deep reactive ion etching (12) to form microwells using buffered hydrofluoric acid as a solvent of silicon dioxide. Then, a fluorocarbon polymer was formed on the photoresist and the sidewall of a microwell using plasmaenhanced chemical vapor deposition (13). Finally, the photoresist was removed and the fluorocarbon polymer was lifted off the surface of the silicon chip.…”
Section: Microwell Array Chipmentioning
confidence: 99%