Plasma-enhanced deposition of high-quality epitaxial silicon at low temperatures

Comfort, J.H.; Reif, R.

doi:10.1063/1.98278

Cited by 17 publications

(17 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The conductivity also does not seem to saturate at the high doping levels but increases linearly with increasing dopant concentration. This result is consistent with the kinetically controlled decomposition process proposed for diborane (23,27,35).…”

Section: Discussionsupporting

confidence: 92%

“…This result is consistent with the kinetically controlled decomposition process proposed for diborane (23,27,35). Since boron is not seen to segregate to the grain boundaries, the increase is not as sharp as in the case of arsenic doping.…”

Section: Electrical Conductivity and Dopant Incorporation---supporting

confidence: 88%

“…Very low deposition pressures, however, entail low substrate surface coverage and relatively high reaction efficiencies. Under such conditions, the adsorption probabilities of silane onto the substrate surface are high and are limited only by collisional factors, hence the observed decrease in growth rate as the diborane dilution in silane is increased (27).…”

Section: Discussionmentioning

confidence: 99%

See 2 more Smart Citations

Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures

Hajjar

Reif

1990

J. Electrochem. Soc.

Self Cite

View full text Add to dashboard Cite

Polycrystalline silicon thin films prepared by the pyrolysis of silane with the assistance of a plasma have been investigated. The films were deposited in an experimental CVD reactor at a deposition pressure of 6 mtorr, and over the temperature range of 500 ~ to 800~ The foremost characteristic of the plasma was the enhancement of the growth rate of the film. A thirtyfold increase in growth rate was observed in films deposited at 600~ by plasma enhancement over similar films deposited thermally. The films deposited below 600~ were amorphous. The glow-discharge was also seen to favor the nucleation of <220> islands in the polysilicon film, but had no effect on the electrical properties of the film. In situ doped n-type polysilicon films were deposited by plasma enhancement from AsHjSiH4 mixtures. The growth rate of the latter films was found to be weakly sensitive to the arsine dilution in silane. For p-type depositions from B2H6/SiH4 mixtures, the plasma promoted the decomposition of the reactant gas, resulting in a growth rate enhancement. The texture of the doped polysilicon films deposited with plasma enhancement was insensitive to dopant dilution in the reactant gas. Moreover, the conductivities of the n-and p-type doped films were successfully modulated by over six orders of magnitude when the dopant dilution in the reactant gas was increased from 0 to 500 ppm. Finally, a segregation of the dopant atoms from the gas phase to the solid phase was observed for both p-and n-type dopants.

show abstract

Section: Discussionsupporting

confidence: 92%

Section: Electrical Conductivity and Dopant Incorporation---supporting

confidence: 88%

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures

Hajjar

Reif

1990

J. Electrochem. Soc.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Recently, the low-temperature Si epitaxial growth technique draws considerable attention as inline epitaxial techniques which are applicable to the semiconductor device manufacturing process [20][21][22][23][24][25][26][27]. For example, it becomes very important for the future semiconductor device technology to develop low-temperature doping and epitaxial growth techniques for the formation of p + or n + layers after fabricating the main parts of devices, and low-temperature selective epitaxial growth techniques for fabricating p-or ntype microscopic structures.…”

Section: Prospects For Low-temperature Epitaxial Si Growth Technologymentioning

confidence: 99%

An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma

Yasutake¹,

Kakiuchi²,

Ohmi³

et al. 2011

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

To grow epitaxial Si films with atomic- and electronic-level perfection, a high-temperature chemical vapor deposition (CVD) process (>1000 °C) has been generally employed. To reduce the growth temperature below 600 °C but keeping a high deposition rate, other energy sources than thermal heating are required. Atmospheric pressure plasma CVD (AP-PCVD) is considered to be suitable for fabricating high-quality films at high deposition rates due both to the high radical density and to the low ion bombardment against the film surface, because the collision frequency among ions and neutral atoms is high. The present study focuses on the low-temperature growth of epitaxial Si, and experimentally demonstrates that AP-PCVD is capable of growing epitaxial Si films with high perfection applicable for semiconductor devices. It is found that the pre-growth cleaning of the Si surface by H(2) AP plasma is effective to grow high-purity Si films, and that the exposure of a film-growing surface to AP plasma during growth is important to form particle-free and defect-free Si films. From the experimental results and the first-principles molecular dynamics simulations of surface atomic reactions, it can be mentioned that both H atoms in the AP plasma and high-density He atoms having thermal kinetic energy contribute to the reduction of growth temperature by supplying considerable energy to the surface.

show abstract

“…For instance, when an n-type dopant is added to the system, a significant decrease of the growth rate value is observed. [1][2][3] Despite the efforts in understanding and modeling the overall growth process for silicon and other major semiconductor compounds, a quantitative description of the pathways underlying the dopant incorporation received little attention.…”

mentioning

confidence: 99%

Kinetic Modeling and Dopant Effect on Silicon Deposition: Low Pressure and Plasma Assisted Chemical Vapor Deposition

Masi

Zonca

Carrà

1999

J. Electrochem. Soc.

View full text Add to dashboard Cite

The kinetics of silicon deposition from silane in low pressure conditions was addressed in the absence and in the presence of arsine as the dopant precursor. The analysis includes a detailed modeling of the chemical mechanism for gas phase, plasma, and surface reactions embedded in a simplified transport description. The silane chemistry was taken almost entirely from the literature, while most of the arsine surface chemistry was inferred from experimental observations. The unknown rate constants were estimated through traditional thermochemical approaches. Both the thermal activated (low pressure chemical vapor deposition, LPCVD) and the plasma assisted (PACVD) processes were examined to validate the theory on different literature trends. The dopant incorporation during codoping processes affects the semiconductor growth rate, altering the kinetics of the deposition reactions. Here, this aspect was investigated by means of the charge-transfer adsorption theory that explains the modification of the surface reaction rate constants by means of the alteration of the Fermi level value of the solid due to the dopant presence. This theory is also consistent with the typical long range action of dopants on film properties. Particularly, the As codoping of silicon in the arsine/silane system was investigated here by confirming the general decrease of the growth rate in presence of n-type dopants.

show abstract

Plasma-enhanced deposition of high-quality epitaxial silicon at low temperatures

Cited by 17 publications

References 14 publications

Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures

Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures

An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma

Kinetic Modeling and Dopant Effect on Silicon Deposition: Low Pressure and Plasma Assisted Chemical Vapor Deposition

Contact Info

Product

Resources

About