Plasma-Enhanced Co-Polymerization of Organo-siloxane and Hydrocarbon for Low-k/Cu Interconnects

Kawahara, J.; Nakano, Akinori; Kunimi, Nobutaka; Kinoshita, Keizo; Hayashi, Yoshihiro; Ishikawa, Akira; Seino, Yutaka; Ogata, Tetsuya; Sonoda, Y.; Yoshino, T.; Goto, Takashi; Takada, S.; Miyoshi, Hidenori; Matsuo, Hiroki; Kikkawa, Takamaro

doi:10.1143/jjap.46.4064

Cited by 6 publications

(5 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Knowing the contribution of , we then arrive at a value of ~1.7 eV for the activation energy of C i injection ( ) in a close agreement with the activation energy for the flux of injected C i reported in Ref. [12]. The deduced activation energy for V C migration ( ) is ~2.5 eV as shown in Fig.…”

Section: Kinetics Modelsupporting

confidence: 84%

Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC

Ayedh

Nipoti

Hallén

et al. 2018

MSF

View full text Add to dashboard Cite

The carbon vacancy (V C ) is a major limiting-defect of minority carrier lifetime in n-type 4H-SiC epitaxial layers and it is readily formed during high temperature processing. In this study, a kinetics model is put forward to address the thermodynamic equilibration of V C , elucidating the possible atomistic mechanisms that control the V C equilibration under C-rich conditions. Frenkel pair generation, injection of carbon interstitials (C i 's) from the C-rich surface, followed by recombination with V C 's, and diffusion of V C 's towards the surface appear to be the major mechanisms involved. The modelling results show a close agreement with experimental deep-level transient spectroscopy (DLTS) depth profiles of V C after annealing at different temperatures.

show abstract

Section: Kinetics Modelsupporting

confidence: 84%

Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC

Ayedh

Nipoti

Hallén

et al. 2018

MSF

View full text Add to dashboard Cite

show abstract

“…The plasmaenhanced copolymerization of DVS-BCB with divinylbenzene (DVB) or diisopropenylbenzene (DIPB) allows control of the mechanical strength at equivalent dielectric constant. 174 In summary, the process conditions in PECVD deposited films (plasma power, deposition temperature, chamber pressure, addition of an oxidant, etc.) are the key parameters to optimize film properties, the boundaries of which are controlled by the precursor structure and chemical composition.…”

Section: Inorganics: Sicohmentioning

confidence: 99%

“…An interesting example is provided by Kawahara et al who designed an exotic hybrid precursor with cross-linking functionalities, i.e., divinyl siloxane−benzocyclobutene (DVS−BCB). The plasma-enhanced copolymerization of DVS−BCB with divinylbenzene (DVB) or diisopropenylbenzene (DIPB) allows control of the mechanical strength at equivalent dielectric constant …”

Section: Materials 33 > K > 27mentioning

confidence: 99%

Low Dielectric Constant Materials

2009

View full text Add to dashboard Cite

“…Investigation of carbon clusters is also of high importance. With the thermal oxidation of SiC, some portion of carbon atoms is known to diffuse into the bulk SiC region [35][36] to fill in the carbon vacancy (VC). [37][38] As for calculations of carbon clusters in SiC, charge transition levels and dissociation energy (i.e., an energy to remove a single carbon atom from a defect) for carbon interstitial clusters in 3C-SiC and for di-interstitials in 4H-SiC were investigated based on the LDA, 25) and formation energies of carbon clusters in 3C-and 4H-SiC were reported based on the mixed LDA-exact exchange calculation.…”

Section: Introductionmentioning

confidence: 99%

Native point defects and carbon clusters in 4H-SiC: A hybrid functional study

Kobayashi

Harada

Kumagai

et al. 2019

Journal of Applied Physics

View full text Add to dashboard Cite

We report first-principles calculations that clarify the formation energies and charge transition levels of native point defects and carbon clusters in the 4H polytype of silicon carbide (4H-SiC) under a carbon-rich condition. We applied a hybrid functional that reproduces the experimental bandgap of SiC well and offers reliable defect properties. For point defects, we investigated single vacancies, antisites, and interstitials of Si and C on relevant sites. For carbon clusters, we systematically introduced two additional C atoms into the perfect 4H-SiC lattice with and without removing Si atoms and performed structural optimization to identify stable defect configurations. We found that neutral Si antisites are energetically favorable among Si-point defects in a wide range of the Fermi level position around the intrinsic regime, whereas negatively-charged Si vacancies and a positively-charged Si interstitial on a site surrounded by three Si and three C atoms become favorable under nand p-type conditions, respectively. For C-point defects, neutral C antisites are favorable under intrinsic and n-type conditions, whereas positively-charged C vacancies become favorable under p-type conditions.We also found that a di-carbon antisite is more favorable than a C-split interstitial, which is the most stable form of single C interstitials.2

show abstract

Plasma-Enhanced Co-Polymerization of Organo-siloxane and Hydrocarbon for Low-k/Cu Interconnects

Cited by 6 publications

References 9 publications

Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC

Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC

Low Dielectric Constant Materials

Native point defects and carbon clusters in 4H-SiC: A hybrid functional study

Contact Info

Product

Resources

About