Plasma-enhanced chemical vapor deposition of i
 n s
 i
 t
 u doped epitaxial silicon at low temperatures. I. Arsenic doping

Comfort, J.H.; Reif, R.

doi:10.1063/1.343040

Cited by 24 publications

(23 citation statements)

References 39 publications

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“…This observation is consistent with the result reported on the adsorption of phosphine, a chemically similar molecule to arsine, on silicon surfaces (26). This will tend to reduce the fraction of arsenic available for incorporation (34). The sharp increase in conductivity as the arsine dilution in the reactant gas is increased is attributed to carrier trapping at the grain boundaries of the film.…”

Section: Electrical Conductivity and Dopant Incorporation---supporting

confidence: 91%

Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures

Hajjar

Reif

1990

J. Electrochem. Soc.

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Polycrystalline silicon thin films prepared by the pyrolysis of silane with the assistance of a plasma have been investigated. The films were deposited in an experimental CVD reactor at a deposition pressure of 6 mtorr, and over the temperature range of 500 ~ to 800~ The foremost characteristic of the plasma was the enhancement of the growth rate of the film. A thirtyfold increase in growth rate was observed in films deposited at 600~ by plasma enhancement over similar films deposited thermally. The films deposited below 600~ were amorphous. The glow-discharge was also seen to favor the nucleation of <220> islands in the polysilicon film, but had no effect on the electrical properties of the film. In situ doped n-type polysilicon films were deposited by plasma enhancement from AsHjSiH4 mixtures. The growth rate of the latter films was found to be weakly sensitive to the arsine dilution in silane. For p-type depositions from B2H6/SiH4 mixtures, the plasma promoted the decomposition of the reactant gas, resulting in a growth rate enhancement. The texture of the doped polysilicon films deposited with plasma enhancement was insensitive to dopant dilution in the reactant gas. Moreover, the conductivities of the n-and p-type doped films were successfully modulated by over six orders of magnitude when the dopant dilution in the reactant gas was increased from 0 to 500 ppm. Finally, a segregation of the dopant atoms from the gas phase to the solid phase was observed for both p-and n-type dopants.

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Section: Electrical Conductivity and Dopant Incorporation---supporting

confidence: 91%

Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures

Hajjar

Reif

1990

J. Electrochem. Soc.

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“…A linear dependence of As ͑and P͒ incorporation in Si on partial pressure of arsine ͑phosphine͒ has been reported. 26,27 Since arsine is more easily adsorbed on the Si surface ͑sticking coefficient almost equal to unity͒ 27 compared to silane, an increased concentration of adsorbed surface As is anticipated. The dynamic balance between the surface adsorption and desorption of As settles the amount of incorporated As in the films.…”

Section: B Dopant Incorporationmentioning

confidence: 99%

Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure

Pejnefors

Zhang

Radamson

et al. 2000

Journal of Applied Physics

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“…These results seem to agree with the theoretical analysis and the values of n i (T). 32 It should be mentioned that electron concentrations have been used in the preceding arguments. In our deposition conditions, the intrinsic concentration varies between ϳ5 ϫ 10 17 and ϳ3 ϫ 10 18 cm Ϫ3 at 650 and 800ЊC, respectively.…”

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confidence: 99%

In Situ Phosphorus Doping during Silicon Epitaxy in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor

Ban

Öztürk

1999

J. Electrochem. Soc.

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Low temperature silicon epitaxy processes capable of producing ultrathin in situ doped layers have been considered able to overcome some of the challenges in realizing advanced metal oxide semiconductor field effect transistor (MOSFET) devices. As previously demonstrated for complementary metal oxide semiconductor (CMOS), 1 for buried p-channel MOSFET (PMOSFET), 2 and for double-layer epitaxial-channel p-channel MOSFETs, 3 epitaxial deposition in forming channels is a potentially promising technique since it allows independent control of doping and thickness. This is clearly an important advantage over other doping techniques provided that ultrathin layers (Յ300 Å) with abrupt doping transitions can be obtained.Early studies on n-type doping which were performed mostly in atmospheric pressure reactors at temperatures in excess of 1000ЊC revealed several common features unique to doping using PH 3 and arsine (AsH 3 ). Namely, doping incorporation decreased as the deposition temperature increased, 4-7 and the silicon growth rate was dramatically reduced when PH 3 or AsH 3 were added as the dopant source in both polycrystalline deposition and epitaxial silicon growth. 8-11 It was confirmed through surface studies that PH 3 with its very high sticking coefficient adsorbed readily on the silicon surface and hindered SiH 4 adsorption. 12 The pyrolysis of PH 3 at low partial pressures additionally resulted in PH and PH 2 species at high temperatures. At high partial pressures, however, the existence of P 2 and P 4 species made heavy phosphorus doping difficult. 7 Another challenge in phosphorus doping is the formation of retrograde profiles with abrupt transitions desired for novel device applications. 13-15 It has been commonly reported that undoped layers grown following an in situ phosphorus doped layer using PH 3 contain high levels of phosphorus, which was attributed to the high residence time of phosphorus species. 13,16 In this report, we present experimental results on phosphorus incorporation using PH 3 , Si 2 H 6 , and Cl 2 chemistry in a temperature range of 650 to 800ЊC. Effects of phosphine partial pressure and temperature on growth rate as well as phosphorus concentration are determined. Difficulties associated with n-type doping using PH 3 , which do not exist with in situ boron doping using B 2 H 6 , are also addressed in the context of forming epitaxial layers needed for advanced devices.Ultrahigh vacuum rapid thermal chemical vapor deposition (UHV-RTCVD) has been previously introduced by this laboratory to produce ultrathin device quality epitaxial layers for ultralarge scale integration (ULSI) device applications, 17,18 UHV-RTCVD is a singlewafer, cold wall, rapid thermal processing technique that can be incorporated in a cluster tool. In UHV-RTCVD, disilane (Si 2 H 6 ) is used to achieve growth rates compatible with single-wafer manufacturing at low pressures. Epitaxial growth is achieved at 800ЊC with growth rates in excess of 200 nm/min. Selectivity to insulators is maintained with the help of Cl 2...

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Plasma-enhanced chemical vapor deposition of i n s i t u doped epitaxial silicon at low temperatures. I. Arsenic doping

Cited by 24 publications

References 39 publications

Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures

Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures

Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure

In Situ Phosphorus Doping during Silicon Epitaxy in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor

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