Plasma-Enhanced Chemical Vapor Deposition

Kakiuchi, Hiroaki

doi:10.2493/jjspe.82.956

Cited by 1 publication

(1 citation statement)

References 30 publications

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“…The common features for almost TSV integration processes are as follows: 4,5) silicon wafer etching by a deep reactive ion etching (RIE), the deposition of an insulator liner on sidewalls customarily by the chemical vapor deposition (CVD) method, and the formation of a conductive layer which generally consists of the deposition of diffusion barrier metal and copper seed layer, and via filling though copper electroplating. Nowadays, these TSV key films are depending on plasmaenhanced CVD (PECVD), [6][7][8][9][10] physical vapor deposition (PVD), 11) atomic layer deposition (ALD) [12][13][14][15] and plasmaenhanced ALD (PEALD) [16][17][18] system. Those deposition methods are not able to answer the actual TSV needs.…”

Section: Introductionmentioning

confidence: 99%

Effects of amplitude modulated capacitively coupled discharge Ar plasma on kinetic energy and angular distribution function of ions impinging on electrodes: particle-in-cell/Monte Carlo collision model simulation

Abe

Kamataki

Yamamoto

et al. 2022

Jpn. J. Appl. Phys.

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We investigated effects of amplitude modulated (AM) capacitively coupled Ar discharge plasma on the ion energy distribution function (IEDF) and the ion angular distribution function (IADF) incident on electrodes using the particle-in-cell/Monte Carlo collision model. For AM discharge, the electron density and electron temperature and the kinetic energy and angle of ions incident on the ground electrode change periodically with AM frequency, whereas ones for continues wave discharge are almost constant. For AM discharge, the plasma had hysteresis characteristics. The variation width of the peak energy of IEDF and the full width at half maximum (FWHM) of IADF increase with the AM level. These effects of AM method discharge are more noticeable at lower pressures. Thus, the AM discharge offers a way to control simultaneously IEDF and IADF, which opens a new avenue of plasma processes such an ALD-like PECVD.

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