Plasma-enhanced-chemical-vapor-deposited ultralow k for a postintegration porogen removal approach

Abstract

Articles you may be interested inEffect of UV wavelength on the hardening process of porogen-containing and porogen-free ultralow-k plasmaenhanced chemical vapor deposition dielectricsa)

Damage Free Cryogenic Etching of a Porous Organosilica Ultralow-k Film

“…At cryogenic temperature, etch products condense from the etch front into the bulk of low-k material, filling the interconnected pores and protecting the bulk from active radical corrosion. By adding SiF 4 and O 2 to the SF 6 plasma, the PID can be even further reduced, thanks to a better passivation.…”

“…1,2 Although various novel approaches have been proposed to reduce the PID, significant improvement remains to be proven and validated up to integration level. [3][4][5] In this paper, we report a cryogenic low-k etching approach that benefits from a sidewall surface protection effect. The sidewall protection reduces probability of penetration of plasma radicals (O, H, F. .…”

Post Porosity Plasma Protection a new approach to integrate k ≤ 2.2 porous ULK materials

“…Regarding the former, the following approaches have been proposed: organic or metallic hardmask integration [2], low temperature plasma etch [3], post plasma damage repair [4] and porosity last strategy [5]. On the other hand, the development of more plasma resistant low-k materials has been based on increasing their carbon content and/or decreasing their mean pore diameter [6].…”

Modifications of dielectric films induced by plasma ashing processes: Hybrid versus porous SiOCH materials

“…[6][7][8][9][10] To solve this issue, one of the emerging solutions is the integration of a low-k material using the late porogen removal approach. 11,12 In this method, the porosity in the dielectric material is generated by a sacrificial polymer or porogen ͑carbon-rich material͒ which is removed after patterning or copper filling. 13,14 Such hybrid materials ͑SiOCH matrix+ porogen͒ are then expected to behave like nonporous materials during plasma etching and ashing processes ͑as long as the porogens have not been released͒.…”