Modifications of dielectric films induced by plasma ashing processes: Hybrid versus porous SiOCH materials

Darnon, Maxime; Chevolleau, T.; David, T.; Possémé, N.; Ducoté, J.; Licitra, C.; Vallier, L.; Joubert, O.; Torres, J.

doi:10.1116/1.3006021

Cited by 22 publications

(17 citation statements)

References 24 publications

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“…33 The argon plasma conditions used for these exposures were previously found to emit radiation primarily in the VUV range, with dominant emission peaks at 11.6 and 11.8 eV. 34 Each of the VUV-exposed samples was exposed to a photon fluence of approximately 5 Â 10 15 photons/cm 2 .…”

mentioning

confidence: 99%

Time-dependent dielectric breakdown of plasma-exposed porous organosilicate glass

Nichols

Sinha

Wiltbank

et al. 2012

Applied Physics Letters

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confidence: 99%

Time-dependent dielectric breakdown of plasma-exposed porous organosilicate glass

Nichols

Sinha

Wiltbank

et al. 2012

Applied Physics Letters

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“…According to recent publications, the option with He/H 2 and Ar/H 2 DSPs prevents carbon depletion from the low-k materials matrix. [4][5][6] Therefore, the degradation of the dielectric constant is minimal, and these processes are considered the most attractive options for the microelectronic industry.…”

mentioning

confidence: 99%

Effect of Porogen Residue on Chemical, Optical, and Mechanical Properties of CVD SiCOH Low-k Materials

Urbanowicz

Vanstreels

Shamiryan

et al. 2009

Electrochem. Solid-State Lett.

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The effect of He/H 2 downstream plasma on chemical vapor deposition ͑CVD͒ low-k films with different porosities was studied. The results show that this plasma does not reduce the concentration of Si-CH 3 bonds in the low-k matrix and that the films remain hydrophobic. However, mass loss and reduction in bulk C concentration were observed. The latter phenomena are related to the removal of porogen residue formed during the UV curing of the low-k films. It is demonstrated that the porogen residue removal changes the films' porosity and mechanical properties. The depth of the modification is limited by the penetration of H radicals into the porous low-k films. The plasma-induced damage of porous SiCOH-type low-k materials is one of the key problems in Cu/low-k integration.1 The most severe plasma damage occurs during photomask ͑resist͒ removal. 2The reason for this phenomenon is the hybrid nature of the SiCOH materials. These materials contain a SiO 2 -like matrix where part of the terminating oxygen atoms is replaced by organic groups ͑most often CH 3 ͒. The organic groups provide the films' hydrophobicity, which is important for the dielectric constant reduction. The hybrid nature is the reason for the different reactivities of the low-k components. For instance, the reactive species from plasma such as O radicals penetrate into the porous network of the low-k films and may result in substantial carbon depletion, thus leading to an increase in the k value. The depth of penetration is defined by the diffusion coefficient of active radicals into the pores and their recombination probability on the pore wall. 3Two commonly known approaches are used for the resist removal: ͑i͒ a low temperature, low pressure anisotropic plasma, where the photoresist is removed by an ion-assisted process, oxidizing or reducing plasma chemistries at low temperatures and ͑ii͒ hydrogen-based downstream plasma ͑DSP͒ where the resist is removed at high temperatures by a thermally activated chemical process. According to recent publications, the option with He/H 2 and Ar/H 2 DSPs prevents carbon depletion from the low-k materials matrix.4-6 Therefore, the degradation of the dielectric constant is minimal, and these processes are considered the most attractive options for the microelectronic industry.The porosity in advanced chemical vapor deposition ͑CVD͒ low-k films is created after deposition by the removal of a sacrificial phase ͑porogen͒ by UV-assisted thermal curing. UV curing also results in formation of the Si-O-Si network with improved mechanical properties. 7,8 The porogen molecules are normally cyclic hydrocarbons 9 that are photodissociated by UV light with the formation of volatile hydrocarbons and nonvolatile carbon-rich residues.10,11 The effect of the porogen residues on the low-k properties and the plasma processing compatibility are largely unknown. Fourier transform infrared ͑FTIR͒ spectrometry has a limited sensitivity to amorphous carbon ͑CvC and C-C bonds͒, and this is the reason why it is difficult to monitor porogen r...

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“…The agreement between the overall porosity values obtained with XRR and with ellipsometric porosimetry (EP) [47] is good, even if the porosity values measured by XRR are generally slightly higher than the ones measured by EP (Fig. 19 and Tab.…”

Section: X-ray Metrology Of Low-κ Dielectricsmentioning

confidence: 58%

X-ray metrology for advanced microelectronics

Wyon

2010

Eur. Phys. J. Appl. Phys.

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Abstract. The recent development of bright X-ray sources, reliable X-ray focusing optics, large X-ray detectors and X-ray data modelling and processing, have improved X-ray techniques to the point where many are being introduced in MOS transistor manufacturing lines as new metrology methods. The fundamental X-ray physical properties, such as their small wavelength and their weak interaction with solid-state matter satisfy basic in-line metrology requirements: non-destructiveness, speed, accuracy, reliability and long-term stability. The capability of X-ray based metrology methods to monitor critical 65 and 45 nm processes such as ion implant, nitrided SiO2 gate dielectrics, NiSi, Cu/porous low-κ interconnects and MIM capacitors is highlighted in this paper.

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Modifications of dielectric films induced by plasma ashing processes: Hybrid versus porous SiOCH materials

Cited by 22 publications

References 24 publications

Time-dependent dielectric breakdown of plasma-exposed porous organosilicate glass

Time-dependent dielectric breakdown of plasma-exposed porous organosilicate glass

Effect of Porogen Residue on Chemical, Optical, and Mechanical Properties of CVD SiCOH Low-k Materials

X-ray metrology for advanced microelectronics

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