Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)

Chen, Zhixian; Li, X.; Li, W.-M.; Lo, Guo‐Qiang

doi:10.1051/matecconf/20163901010

Cited by 4 publications

(5 citation statements)

References 10 publications

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“…The nitrogen precursors for the ALD of metal nitrides include NH 3 [212,275], hydrazine [276], N 2 plasma [277,278], and NH 3 plasma [261,262]. NH 3 is commonly used, given that the metal precursors are sufficiently reactive [212,275].…”

Section: Ald Precursors For Non-metalsmentioning

confidence: 99%

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Atomic layer deposition of thin films: from a chemistry perspective

Chai

Wang

2023

Int. J. Extrem. Manuf.

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Atomic layer deposition (ALD) has become an indispensable thin-film technology in the contemporary microelectronics industry. The unique self-limited layer-by-layer growth feature of ALD has outstood this technology to deposit highly uniform conformal pinhole-free thin films with angstrom-level thickness control, particularly on 3D topologies. Over the years, the ALD technology has enabled not only the successful downscaling of the microelectronic devices but also numerous novel 3D device structures. As ALD is essentially a variant of chemical vapor deposition, a comprehensive understanding of the involved chemistry is of crucial importance to further develop and utilize this technology. To this end, we, in this review, focus on the surface chemistry and precursor chemistry aspects of ALD. We first review the surface chemistry of the gas-solid ALD reactions and elaboratively discuss the associated mechanisms for the film growth; then, we review the ALD precursor chemistry by comparatively discussing the precursors that have been commonly used in the ALD processes; and finally, we selectively present a few newly-emerged applications of ALD in microelectronics, followed by our perspective on the future of the ALD technology.

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Section: Ald Precursors For Non-metalsmentioning

confidence: 99%

“…Using Ti(NEt 2 ) 4 and NH 3 plasma, TiN films with a low resistivity of ca. 250 µΩ cm were deposited at 300 • C; however, higher carbon concentration was observed at lower deposition temperatures [261]. Ta(NMe 2 ) 5 was used with H 2 plasma to deposit TaN [201].…”

Section: Metal Amidesmentioning

confidence: 99%

Atomic layer deposition of thin films: from a chemistry perspective

Chai

Wang

2023

Int. J. Extrem. Manuf.

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“…Few studies are dedicated to alkoxides (e. g. titanium tetraisopropoxide, TTIP 13 ), because such oxygen containing ligands should be avoided to prevent oxygen contamination. Most of the literature focus on alkylamides such as tetrakis(dimethylamino)titanium (TDMAT), tetrakis(diethylamino)titanium (TDEAT), tetrakis(ethylmethylamino)titanium (TEMAT) or heteroleptic molecules such as biscyclopentadienyl titanium triisopropylguanidinate (Cp 2 Ti[(N i Pr) 2 CN(H) i Pr]) [14][15][16][17][18][19] . Among those organometallic precursors, TDMAT is currently the most used and investigated in research laboratories.…”

Section: Introductionmentioning

confidence: 99%

Conductive TiN thin films grown by plasma-enhanced atomic layer deposition: Effects of N-sources and thermal treatments

Badie

Tissot

Sciacca

et al. 2023

Journal of Vacuum Science &Amp; Technology A

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This work consists of optimizing TiN plasma-enhanced atomic layer deposition using two different N-sources: NH[Formula: see text] and N[Formula: see text]. In addition to maximizing the growth per cycle (GPC) and to shorten the deposition duration, comprehensive in situ and ex situ physicochemical characterizations give valuable information about the influence of the N-source nature, their dilution in Ar, and the plasma power on layer’s final properties. N[Formula: see text] and NH[Formula: see text] dilutions within Ar are extensively investigated since they are critical to decreasing the mean free path ([Formula: see text]) of plasma-activated species. A 1:1 gas ratio for the N-sources:Ar mixture associated with low flows (20 sccm) is optimal values for achieving highest GPCs (0.8 Å/cycle). Due to lower reactivity and shorter [Formula: see text] of the excited species, N[Formula: see text] plasma is more sensitive to power and generator-to-sample distance, and this contributes to lower conformality than with NH[Formula: see text] plasma. The resistivity of the initial amorphous films was high ([Formula: see text] cm) and was significantly reduced after thermal treatment ([Formula: see text] cm). This demonstrates clearly the beneficial effect of the crystallinity of the film conductivity. Though N[Formula: see text] process appears slightly slower than the NH[Formula: see text] one, it leads to an acceptable film quality. It should be considered since it is nonharmful, and the process could be further improved by using a reactor exhibiting optimized geometry.

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“…Using TDEAT, Wang et al reported lowering the resistivity of halogen-free ALD TiN to 450 μΩ cm in an 18.1 nm film. Besides thermal ALD, PEALD was also applied to synthesize TiN using TDMAT − and TEMATi as precursors.…”

Section: Introductionmentioning

confidence: 99%

Low-Resistivity Titanium Nitride Thin Films Fabricated by Atomic Layer Deposition with TiCl₄ and Metal–Organic Precursors in Horizontal Vias

Kuo

McLeod

Lee

et al. 2023

ACS Appl. Electron. Mater.

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The resistivity of halogen-free atomic layer deposition (ALD) TiN thin films was decreased to 220 μΩ cm by combining the use of a high-thermal stability nonhalogenated Ti precursor with a highly reactive nitrogen source, anhydrous hydrazine (N 2 H 4 ). TDMAT [tetrakis (dimethyl-amino)titanium], TDEAT [tetrakis(diethylamido)titanium], and TEMATi [tetrakis (ethylmethyl-amido)titanium] were compared to TiCl 4 as precursors for ALD TiN using N 2 H 4 as a coreactant. By minimizing the pulse length of the Ti-source precursor and optimizing the deposition temperature, the resistivity of TiN thin films deposited using these precursors was reduced to 400 μΩ cm for TDMAT (at 350 °C), 300 μΩ cm TDEAT (at 400 °C), and 220 μΩ cm for TEMATi (at 425 °C) compared to 80 μΩ cm for TiCl 4 (at 500 °C). The data are consistent with the lowest resistivity for halogen-free ALD corresponding to the organic precursor with the highest thermal stability, thereby allowing maximum ALD temperature. After optimization, TiN thin films were grown in horizontal vias, illustrating conformal and uniform TiN using both TiCl 4 and TEMATi in horizontal vias in patterned substrates.

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Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)

Cited by 4 publications

References 10 publications

Atomic layer deposition of thin films: from a chemistry perspective

Atomic layer deposition of thin films: from a chemistry perspective

Conductive TiN thin films grown by plasma-enhanced atomic layer deposition: Effects of N-sources and thermal treatments

Low-Resistivity Titanium Nitride Thin Films Fabricated by Atomic Layer Deposition with TiCl₄ and Metal–Organic Precursors in Horizontal Vias

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Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)

Cited by 4 publications

References 10 publications

Atomic layer deposition of thin films: from a chemistry perspective

Atomic layer deposition of thin films: from a chemistry perspective

Conductive TiN thin films grown by plasma-enhanced atomic layer deposition: Effects of N-sources and thermal treatments

Low-Resistivity Titanium Nitride Thin Films Fabricated by Atomic Layer Deposition with TiCl4 and Metal–Organic Precursors in Horizontal Vias

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Product

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About

Low-Resistivity Titanium Nitride Thin Films Fabricated by Atomic Layer Deposition with TiCl₄ and Metal–Organic Precursors in Horizontal Vias