Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma

Lee, Dong-Kwon; Wan, Zhixin; Bae, Jong‐Sup; Lee, Han‐Bo‐Ram; Ahn, Ji‐Hoon; Kim, Sang-Deok; Kim, Ja-Yong; Kwon, Se‐Hun

doi:10.1016/j.matlet.2015.12.049

Cited by 26 publications

(13 citation statements)

References 15 publications

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“…Lee et al explored SnO 2 PEALD using halogenated SnCl 4 precursor and O 2 plasma. This showed improved growth rate, film purity, and crystallinity compared with the thermal ALD process using SnCl 4 /H 2 O [16]. However, there is still a lack of precursor combinations for the growth of ALD SnO 2 film at broad temperature window.…”

Section: Introductionmentioning

confidence: 96%

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

et al. 2020

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Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

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Section: Introductionmentioning

confidence: 96%

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

et al. 2020

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“…The lowest values of R sh = 6.82 Ω and ρ = 0.4 × 10 − 3 Ω cm are found in 6-at% Zr-doped SnO 2 film. In addition, a good efficiency can be synthesized by various deposition techniques such as electron beam evaporation [21], magnetron sputtering [22], atomic layer deposition [23], chemical vapor deposition [24], and pulsed laser deposition [25]. Compared to the above techniques, spray pyrolysis is one of the best owing to its low cost, homogeneous growth on large-area substrates, and easy control of the chemical composition of thin film.…”

Section: Introductionmentioning

confidence: 99%

Zr-doped SnO2 thin films synthesized by spray pyrolysis technique for barrier layers in solar cells

Reddy¹,

Akkera

Sekhar

et al. 2017

Appl. Phys. A

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“…Composed of physically energetic charged particles and chemically reactive neutral particles, plasma has been widely used in various fields including material fabrication and nuclear fusion as well as medical, environmental, and aerospace industries [1,2]. Plasma processing techniques such as plasma etching [3][4][5][6][7], ashing [8][9][10][11], and deposition [12][13][14][15][16] are the most important steps to fabricate the high-end memory and system semiconductors used in internet of things and artificial intelligence technologies. For plasma deposition in particular, plasma sputtering, plasma-enhanced chemical vapor deposition (PECVD), and plasma-enhanced atomic layer deposition (PEALD) approaches have been widely used for their high deposition rates, low-temperature processing, good film conformality, and high film uniformity [12,13,17,18].…”

Section: Introductionmentioning

confidence: 99%

Crossing Frequency Method Applicable to Intermediate Pressure Plasma Diagnostics Using the Cutoff Probe

Kim¹,

Lee

et al. 2022

Sensors

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Although the recently developed cutoff probe is a promising tool to precisely infer plasma electron density by measuring the cutoff frequency (fcutoff) in the S21 spectrum, it is currently only applicable to low-pressure plasma diagnostics below several torr. To improve the cutoff probe, this paper proposes a novel method to measure the crossing frequency (fcross), which is applicable to high-pressure plasma diagnostics where the conventional fcutoff method does not operate. Here, fcross is the frequency where the S21 spectra in vacuum and plasma conditions cross each other. This paper demonstrates the fcross method through three-dimensional electromagnetic wave simulation as well as experiments in a capacitively coupled plasma source. Results demonstrate that the method operates well at high pressure (several tens of torr) as well as low pressure. In addition, through circuit model analysis, a method to estimate electron density from fcross is discussed. It is believed that the proposed method expands the operating range of the cutoff probe and thus contributes to its further development.

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Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma

Cited by 26 publications

References 15 publications

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Zr-doped SnO2 thin films synthesized by spray pyrolysis technique for barrier layers in solar cells

Crossing Frequency Method Applicable to Intermediate Pressure Plasma Diagnostics Using the Cutoff Probe

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