Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application

Qiu, Peng; Wei, Huiyun; An, Yunlai; Wu, Qixin; Du, Wenxin; Jiang, Zengxuan; Zhou, Lang; Gao, Chuang; Liu, Sanjie; He, Yingfeng; Song, Yimeng; Peng, Mingzeng

doi:10.1016/j.ceramint.2019.11.026

Cited by 21 publications

(12 citation statements)

References 47 publications

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“…Although not demonstrated in this work, PEALD GaN films have a wide range of applications, despite the presence of oxygen in the films. For instance, Qiu et al [ 43 ] deposited a compact and uniform PEALD GaN thin layer, with an oxygen content of ~20 at.%, as an electron transport layer or a buffer layer for planar perovskite solar cells. The cell efficiency increased from 10.38% without GaN buffer layer to 15.18%.…”

Section: Resultsmentioning

confidence: 99%

“…Further increasing the temperature caused a relatively obvious decrease in band gap, due to the combined effect of the reduced Ga-O and increased Ga-Ga components. In the literature, Qiu et al [ 43 ] prepared 50–200 PEALD cycles of GaN films at 280–300 °C, and the band gap values of the films ranged from 3.95 to 3.58 eV. Alevli et al [ 28 ] used hollow cathode PEALD to grow GaN films at 200 and 450 °C, and the corresponding band gap values were 3.6 and 3.52 eV, respectively.…”

Section: Resultsmentioning

confidence: 99%

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Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

et al. 2022

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Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications. In this study, GaN films are grown using a plasma-enhanced atomic layer deposition (PEALD) with trimethylgallium (TMG) and NH3 plasma. The effect of substrate temperature on growth mechanism and properties of the PEALD GaN films is systematically studied. The experimental results show that the self-limiting surface chemical reactions occur in the substrate temperature range of 250–350 °C. The substrate temperature strongly affects the crystalline structure, which is nearly amorphous at below 250 °C, with (100) as the major phase at below 400 °C, and (002) dominated at higher temperatures. The X-ray photoelectron spectroscopy spectra reveals the unintentional oxygen incorporation into the films in the forms of Ga2O3 and Ga-OH. The amount of Ga-O component decreases, whereas the Ga-Ga component rapidly increases at 400 and 450 °C, due to the decomposition of TMG. The substrate temperature of 350 °C with the highest amount of Ga-N bonds is, therefore, considered the optimum substrate temperature. This study is helpful for improving the quality of PEALD GaN films.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

et al. 2022

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“…Furthermore, ZnO layers of different thicknesses can also be formed on one substrate by combining atomic layer etching (ALE) of ZnO. 50 Recently, GaN has been grown successfully by ALD at temperatures below 300°C using various substrates such as Fdoped tin oxide glass, 51 Si, 52,53 sapphire, 54 and flexible polyethylene naphthalate (PEN). 55 ALD growth of GaN has even been reported to be possible at lower temperatures such as 115°C 56 or room temperature.…”

Section: Pt/zno Interface Could Be One Reason For the High Q/ Bmentioning

confidence: 99%

Atomic Layer Deposition of ZnO for Modulation of Electrical Properties in n-GaN Schottky Contacts

Kim

Jung

Choi

et al. 2021

Journal of Elec Materi

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ZnO films (5 nm and 20 nm) have been grown on GaN single-crystal substrates by thermal atomic layer deposition (ALD) and the electrical properties of n-GaN Schottky contacts modified by such ultrathin ZnO films have been characterized. Compared with 5-nm-thick ZnO, 20-nm-thick ZnO exhibited a better rectifying nature. The average barrier height and ideality factor at room temperature were extracted to be 0.64 eV and 2.33 eV, and 1.01 eV and 1.16 eV, for 5-nm-and 20-nm-thick ZnO, respectively. These results indicate that both the barrier height and ideality factor were altered effectively by changing the ZnO thickness. The temperature-dependent reverse currentvoltage (I-V) characteristics revealed that tunneling was dominant for the 5nm-thick ZnO. A laterally inhomogeneous barrier was appropriate to explain the forward I-V characteristics for both samples. Based on the parallel conductance method and forward I-V data, a lower interface state density was observed for 20-nm-thick ZnO, implying improved interface quality. These results suggest that the electrical properties of n-GaN Schottky contacts could be easily modulated by changing the ZnO thickness.

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“…We introduced the PEALD-GaN thin film into PSCs as a ETL for the first time, as a result, significantly enhanced device efficiency was achieved compared to the ETL-free device. 12 Afterward, we further carefully regulated the bandgap of the PEALD-GaN films to form better energy level matching between the GaN and photoactive layer 13 Kang et al proposed a nanostructured GaN–TiO 2 ETL for dye-sensitized solar cells, in which the GaN layer simultaneously promoted electron injection and prevented back electron transfer. 14 Wang et al presented a theoretical investigation on the perovskite piezo-phototronic solar cells with a GaN ETL, revealing that enhanced device performance could be realized due to the piezo-phototronic effect of GaN.…”

Section: Introductionmentioning

confidence: 99%

Interfacial carrier transport properties of a gallium nitride epilayer/quantum dot hybrid structure

Wei

Qiu

et al. 2022

RSC Adv.

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Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application

Cited by 21 publications

References 47 publications

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

Atomic Layer Deposition of ZnO for Modulation of Electrical Properties in n-GaN Schottky Contacts

Interfacial carrier transport properties of a gallium nitride epilayer/quantum dot hybrid structure

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