2022 Help me understand this report
Interfacial carrier transport properties of a gallium nitride epilayer/quantum dot hybrid structure
Abstract: A suitable energy level arrangement is formed between GaN and CdSe QDs, and the GaN epilayer exhibits better electron extraction ability and faster interfacial electron transfer than the rutile TiO2 single crystal.
Search citation statements
Paper Sections
Select...
Citation Types
0
0
0
Year Published
2023
2023
Publication Types
Select...
1
Relationship
0
1
Authors
Journals
Cited by 1 publication
References 28 publications
(30 reference statements)
0
0
0
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
