Plasma enhanced atomic layer deposition of gallium sulfide thin films

Kuhs, Jakob; Hens, Zeger; Detavernier, Christophe

doi:10.1116/1.5079553

Cited by 18 publications

(6 citation statements)

References 40 publications

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“…For example, by using hexakis-(dimethylamido)digallium and hydrogen sulfide, Meng et al 151 observed the self-limiting growth of GaS x films with a thickness of 20−30 nm in the temperature range of 125−225 °C. Kuhs et al 152 also achieved the self-limiting growth of GaS x films using trimethylgallium and H 2 S/Ar plasma with a temperature range from 70 to 350 °C. However, a low growth temperature is unfavorable for the formation of thermodynamically stable products and defects, and disorder is usually common in lowtemperature growth, which can degrade their electrical properties.…”

Section: Synthesismentioning

confidence: 99%

Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths

Yang

Warner

2020

ACS Appl. Electron. Mater.

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Two-dimensional semiconductors with a layered structure are now among the most extensively studied materials. The unique structural form of 2D layered semiconductors provides several benefits over other existing materials as key components in next-generation nanodevices such as transistors, photodetectors, solar cells, light emitting devices, molecular sensors, and optical imaging sensors. However, most of these studies concentrate on narrow bandgap semiconductors (bandgap E g < 2 eV) that emit/absorb in the red and infrared regions. Recently, more research has focused on wide bandgap 2D layered semiconductors, as they have demonstrated great potential in applications in electronics and optoelectronics for the green and blue wavelength regions. This Review summarizes the 2D layered materials that have been experimentally proven as wide bandgap semiconductors, including GaS, GaSe, InSe

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Section: Synthesismentioning

confidence: 99%

Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths

Yang

Warner

2020

ACS Appl. Electron. Mater.

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“…Modern analytical techniques have opened a new wave of technologies that is permitting a wider spreading of aluminum chalcogenide‐based thin film, presenting controllable thickness (and consequent growth per cycle) when prepared by ALD (atomic layer deposition). [ 138,199,200 ] In 2018 Kuhs, Hens, and Detavernier, using a plasma‐enhanced ALD technique, have prepared amorphous pinhole‐free aluminum sulfides using a reaction combustion in which CS 2 was detected by in situ mass spectrometry and whose composition was obtained from ex situ X‐ray photoelectron spectroscopy (XPS) measurements, [ 200 ] where Figure summarizes the principal findings of this group. Meng et al., in 2017, have used a similar approach, but used instead dimethylamido aluminum.…”

Section: Aluminum Chalcogenidesmentioning

confidence: 99%

“…However, the resulting film in in all cases, despite being pinhole‐free, at the same time presented an amorphous, AlS x composition. [ 200 ] The first group, however to report similar technique, were Sinha, Mahuli, and Sarkar. [ 201 ] In this early study, the conditions of preparing such films were much harsher, with thicker film formation.…”

Section: Aluminum Chalcogenidesmentioning

confidence: 99%

A New, Thorough Look on Unusual and Neglected Group III‐VI Compounds Toward Novel Perusals

Guzzetta

Jellett

Azadmanjiri

et al. 2023

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been permitted. [4][5][6][7] Although, the employment of 2D nanosheets, especially in biomedicine, is still in its primordial state and has permitted to the realization of novel advancements in such applications. [8][9][10] It needs to be highlighted that some of these compounds present mild cytotoxicity and dose-dependent induced metabolic disadvantages. [11,12] Albeit direct use in the body is not yet advisable, it is possible to indirectly employ these compounds in the creation of wearable devices for tracking vital parameters. [13] Research on such topics, both from fundamental and applied studies has led to an exponential increase in the number of publications during the last 10 years (Figure 1c). [14] One of the pivotal characteristics of 2D nanostructures is their high specific area-to-thickness ratio, which can be easily modulated through delamination processes. [15] Ultimately, the smallest crystals that can be created are mono-or bi-atomic layers. To understand how the nanocrystals form from bulk, it is important to comprehend the main characteristic features of the macrocrystals. A layered crystal lattice is presented in Figure 2. These crystals are governed by strong, covalent (or ionic) in-plane bonds, which are often arranged into hexagonal honeycombs. These individual sheets are linked together by inter-plane (inter-layer), and weak van der Waals (vdW) forces. The bond energies between the in-plane atoms, are the major contribution on the total energy of the lattice, leaving weak inter-plane interactions with relatively large distances (i.e., about few hundred picometers in graphene). These large inter-planar spaces are suitable attack points for size reduction, [16][17][18] which requires an external energy input from a providing source in order to delaminate single-layer crystals.The in-plane honeycomb structure is responsible for electrical transport and associated phenomena. For instance, the great mobility of p-electrons and their delocalization on the surface allows excellent transport in graphene. [23,24] However, in some other electro-and photoactivated semiconductors based on 2D materials, the electrical transport on the surface is responsible for the hole-electron confinement. [25] It can also produce poor electrical conduction by 2D materials such as hexagonal boron nitride (hBN) and so making them electrical insulators (see Figure 1a). [26] These differences in the layersThe attention on group III-VI compounds in the last decades has been centered on the optoelectronic properties of indium and gallium chalcogenides. These outstanding properties are leading to novel advancements in terms of fundamental and applied science. One of the advantages of these compounds is to present laminated structures, which can be exfoliated down to monolayers. Despite the large knowledge gathered toward indium and gallium chalcogenides, the family of the group III-VI compounds embraces several other noncommon compounds formed by the other group III elements. These compounds present various crystal lattices...

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“…Recent works using the PE-ALD technique have shown significant advancements in tailoring material properties and refining processing conditions. [22][23][24] This inspired us to attempt the PE-ALD approach by combining the same Ga source reported by Meng et al 7 ie., Ga2(NMe2)6 in combination with H2S plasma as co-reactant to deposit high-quality crystalline gallium sulfide thin films. To our knowledge, depositing crystalline gallium sulfide films using the ALD…”

Section: Reported Thermal Ald Aimingmentioning

confidence: 99%

Plasma-enhanced atomic layer deposition of crystalline Ga2S3 thin films

Mathew,

Poonkottil,

Solano

et al. 2023

Journal of Vacuum Science &Amp; Technology A

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Gallium (III) sulfide is a frontrunner for many energy storage and optoelectronic applications, which demand a deposition technique that offers a high level of control over thickness, composition, and conformality. Atomic layer deposition (ALD) is a potential technique in this regard. However, the state-of-the-art ALD processes for depositing Ga2S3 often lead to films that are amorphous and nonstoichiometric, and contain significant contaminations. Herein, we present a new plasma-enhanced atomic layer deposition (PE-ALD) process using the hexakis(dimethylamido)digallium precursor and H2S plasma coreactant to deposit high-quality Ga2S3 sulfide thin films and compare it to the thermal ALD process using the same reactants. While both cases exhibit typical ALD characteristics, substantial disparity is observed in the material properties. The PE-ALD process deposits crystalline Ga2S3 sulfide thin films at a temperature as low as 125 °C with a growth per cycle of 1.71 Å/cycle. Additionally, the PE-ALD process results in smooth and stoichiometric Ga2S3 films without any detectable carbon and oxygen contamination. Grazing incidence wide-angle x-ray scattering analysis indicates that the as-deposited Ga2S3 film crystallizes in a cubic structure with a preferred orientation along the [111] direction. The Ga2S3 film exhibits a transmittance of 70% and a bandgap of 3.2 eV with a direct transition.

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Plasma enhanced atomic layer deposition of gallium sulfide thin films

Cited by 18 publications

References 40 publications

Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths

Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths

A New, Thorough Look on Unusual and Neglected Group III‐VI Compounds Toward Novel Perusals

Plasma-enhanced atomic layer deposition of crystalline Ga2S3 thin films

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