Plasma deposition of silicon nitride films in a radial‐flow reactor

Abstract

Notation A = Avogadro's number cp = specific heat of gas mixture D,, = effective diffusivity of species i in gas mixture f(e, C) = electron energy distribution function g = gravity vector H = electrode spacing K = thermal conductivity of gas mixture K, = electron density constant Kj = dissociation rate constant of speciesj M = average molecular weight of a film M, = molecular weight of species i M, = mass of electron n = film refractive index n = unit normal to a boundary surface N, = electron density N,, = electron density at reactor center P = system pressure ( P ) = power input

Chemical Vapor Deposition of Several Silicon-Based Dielectric Films

“…could Involve silane (SiH 4 ) or dichlorosilane (SiClzH z) with ammonia and/or nitrogen. Non-stoichiometric films can be deposited in a plasma-enhanced system at temperatures of 250-300·C (2,25). The lower temperatures required for the PECVD Downloaded by [Cambridge University Library] at 16:01 03 April 2015 process permit use of the technique in applications such as passivation layers on GaAs devices or aluminum or gold metallizations where the higher temperatures required for the conventional process would destroy the underlying substrate.…”

“…For each CVD process, it is important to investigate the 434 NEOGI AND GULINO relative importance of such independent variables as substrate temperature, operating reactor pressure, substrate orientation, and reactor geometry. By operating at low pressure «0.5 torr), for example, it is possible to eliminate diffusion as the controlling step in a deposition (2). It has been found that using low pressure CVD (LPCVD) processes, films of highly uniform thickness may be produced by conducting the reaction in the surface reaction-controlled regime.…”

A Mathematical Model for Etching of Silicon Using CF 4 in a Radial Flow Plasma Reactor

“…Transport and reaction in radial flow reactors has been studied for plasma etching (4)(5)(6)(7)(8), as well as plasma deposition (3,9). In these studies, the effect of operating conditions on the etching (or deposition) rate and uniformity * Electrochemical Society Active Member.…”

“…In the present study, etching of silicon using a tetrafluoromethane plasma in a radial flow reactor was investigated. Only chemical etching was considered as was done in previous works (4)(5)(6)(7)(8)(9). Both a continuous-wave (cw) and a pulsed-plasma reactor were studied.…”