We have developed single-wafer RTP modules for LPCVD of silicon nitride, oxynitride, oxide, and oxide/nitride/oxide (ONO) composite films. All films were deposited from dichlorosilane (DCS) as a silicon source gas.The deposition of 20-408, silicon nitride films from DCS and NH3 showed excellent thickness uniformity. Continuous 10-wafer runs at 735OC resulted in 40 8, Si3N4 films with within-wafer uniformity below 0.55% (lo) and wafer-towafer uniformity of 0.50% (lo). Conformal coverage of nitride over non-planar substrates was also demonstrated. The hot-wall reactor configuration suppresses the condensation of "&1 solid byproduct. An activation energy of 1.49eV was derived from the depositions at a reactor pressure of 0.5 Torr and DCS:NH3 =1:3.Oxynitride films were deposited from DCS/NH3/N20 at 800OC. A film composition of SiOo.6Nl.l with a refractive index of 1.80 was obtained.Silicon dioxide (high temperature oxide, HTO) films can also be grown at 8OOOC from DCS and N20.ONO stack films of 170A were deposited in-situ at 800°C using sequential depositions of HTO/nitride/HTO. An Auger electron spectroscopy depth profile of the film revealed a sandwich structure of the film composition.