Plasma deposition of inorganic silicon containing films

Reinberg, A. R.

doi:10.1007/bf02655633

Cited by 57 publications

(26 citation statements)

References 10 publications

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“…Since the measured density was the bulk average density of the film on each wafer, the ensuing Lorentz-Lorenz correlation also gave the bulk average Si/N ratio. The Lorentz-Lorenz correlation for calculating the film composition has been used by Reinberg (1979). Bohn and Manz (1985) also indicated that their results were consistent with the correlation.…”

Section: Rotatingmentioning

confidence: 76%

“…Figure 7 shows that the model correctly predicts the trend of the growth rate changes with power input, and the model predictions are within 10% deviation from the experimental data. The observed small but systematic deviation between the model predictions and the experimental data can be explained by noting that the electrons can diffuse out of the electrode region in the current system, resulting in a reduced effective power input, as observed by Dun et al (1981) and Reinberg (1979). The outgrowth of the plasma is more serious at high power levels than at low power.…”

Section: Predictive Nature Of the Modelmentioning

confidence: 89%

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Plasma deposition of silicon nitride films in a radial‐flow reactor

Yoo

Dixon

1989

AIChE Journal

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Notation A = Avogadro's number cp = specific heat of gas mixture D,, = effective diffusivity of species i in gas mixture f(e, C) = electron energy distribution function g = gravity vector H = electrode spacing K = thermal conductivity of gas mixture K, = electron density constant Kj = dissociation rate constant of speciesj M = average molecular weight of a film M, = molecular weight of species i M, = mass of electron n = film refractive index n = unit normal to a boundary surface N, = electron density N,, = electron density at reactor center P = system pressure ( P ) = power input

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Section: Rotatingmentioning

confidence: 76%

Section: Predictive Nature Of the Modelmentioning

confidence: 89%

Plasma deposition of silicon nitride films in a radial‐flow reactor

Yoo

Dixon

1989

AIChE Journal

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“…Ion plating and rf plasma (plasma-enhanced chemical vapor deposition or PECVD) provide the best adhesion, and ion plating, PECVD, sputtering, and evaporation are in decreasing order of effectiveness. Reinberg (1979) and Hess (1984) deposited Si compounds using a mixture of silane (SiH 4 ) reacting with different ratios at nitriding or oxidizing gases in a glow discharge (rf plasma). Reinberg (1979) and Hess (1984) deposited Si compounds using a mixture of silane (SiH 4 ) reacting with different ratios at nitriding or oxidizing gases in a glow discharge (rf plasma).…”

Section: Hard Materialsmentioning

confidence: 99%

Lubrication Mechanisms and Lubricants

Bhushan

1996

Tribology and Mechanics of Magnetic Storage Devices

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Sliding between clean solid surfaces is generally characterized by a high coefficient of friction and severe wear due to the specific properties of the surfaces, such as low hardness, high surface energy, reactivity, and mutual solubility. Clean surfaces readily adsorb traces of foreign substances, such as organic compounds, from the environment. The newly formed surfaces generally have a much lower coefficient of friction and wear than the clean surface. The presence of a layer of foreign material at an interface cannot be guaranteed during a sliding process; therefore, lubricants are deliberately applied to produce low friction and wear. The term lubrication is applied to two different situations: solid lubrication and fluid (liquid or gaseous) lubrication. Solid LubricationA solid lubricant is any material used as a powder or a thin, solid film on a surface to provide protection from damage during relative movement to reduce friction and wear. Solid lubricants are used for applications in which any sliding contact occurs, for example, a bearing operative at high loads and low speeds and a hydrodynamically lubricated bearing requiring start/stop operations. The term solid lubricants embraces a wide range of materials that provide low friction and wear (Bhushan, 1987a(Bhushan, , 1987bBhushan and Gupta, 1991). Hard materials are also used for low wear under extreme operating conditions. Fluid LubricationA regime of lubrication in which a thick fluid film is maintained, between two sliding surfaces by an external pumping agency, is called hydrostatic lubrication. B. Bhushan, Tribology and Mechanics of Magnetic Storage Devices

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“…[5]- [7] is in the sign of the convective term. The boundary conditions have to be appropriately modified.…”

Section: I2_l I Ex3bmentioning

confidence: 99%

“…[5][6][7]) with their boundary conditions [8] were solved by global orthogonal collocation to yield the radial etch rate and concentration profiles; the initial guesses were obtained by integrating the corresponding plug-flow equations, i.e., the equations that obtain upon setting Pel = Pe2 = oo in [5][6][7], using DGEAR, the IMSL package for integrating stiff equations. [5][6][7]) with their boundary conditions [8] were solved by global orthogonal collocation to yield the radial etch rate and concentration profiles; the initial guesses were obtained by integrating the corresponding plug-flow equations, i.e., the equations that obtain upon setting Pel = Pe2 = oo in [5][6][7], using DGEAR, the IMSL package for integrating stiff equations.…”

Section: I2_l I Ex3bmentioning

confidence: 99%

Effect of Flow Direction on Etch Uniformity in Parallel‐Plate (Radial Flow) Isothermal Plasma Reactors

Venkatesan

Trachtenberg

Edgar

1987

J. Electrochem. Soc.

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unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 141.217.58.200 Downloaded on 2015-03-25 to IP Vol. 134, No. 12 INWARD FLOW OUTWARD FLOW / L J J J / / / / / / / / ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 141.217.58.200 Downloaded on 2015-03-25 to IP Vol. 134, No. 12 EFFECT OF FLOW DIRECTION ON ETCH ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 141.217.58.200 Downloaded on 2015-03-25 to IP

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Plasma deposition of inorganic silicon containing films

Cited by 57 publications

References 10 publications

Plasma deposition of silicon nitride films in a radial‐flow reactor

Plasma deposition of silicon nitride films in a radial‐flow reactor

Lubrication Mechanisms and Lubricants

Effect of Flow Direction on Etch Uniformity in Parallel‐Plate (Radial Flow) Isothermal Plasma Reactors

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