Plasma Deposition and Properties of Silicon Carbonitride Films

Abstract

A variety of advanced analytical techniques were used to characterize silicon carbonitride films grown from new volatile nitrogen-rich silyl derivatives of asymmetrical dimethylhydrazine: (CH 3 ) 2 HSiNHN(CH 3 ) 2 (DMDMSH) and Me 2 Si(NHNMe 2 ) 2 (bisDMHDMS). The results demonstrate that the films contain only Si-C, Si-N, and C( sp 3 )-N bonds, in relative amounts that depend on the molecular structure of the precursor and deposition conditions. The Si-C/[Si-N + C( sp 3 )-N] ratio is considerably larger in the films grown from DMDMSH. The data obtained by a variety of spectroscopic techniques provide solid evidence that some of the films contain C( sp 3 )-N bonds, characteristic of superhard materials, and that the films have a complex, framework structure, rather than being a mixture of Si 3 N 4 , SiC, and C 3 N 4 . The structure of the films depends on the N : Si ratio in the precursor: at N : Si = 2, the films are amorphous and contain nanocrystalline inclusions with a tetragonal structure; at N : Si = 4, the films are purely amorphous. The ability to control the chemical composition and structure of deposits allowed us to produce films with various physicochemical and electrical properties.

Structural, Optical and Electrical Properties of Plasma Deposited Thin Films from Hexamethyldisilazane Compound

“…In regard to the behavior of optical energy band gap, Table II shows that E g decreases between S1 and S3, and then increases, where a minimum occurs in sample S3. The values are in the range of the reported ones in the literature [7,17], which fall in the range 2-5 eV. The decrease of E g can be attributed to the increase of the dangling bonds created in the film during the deposition process [11].…”

“…13 Ω cm, and dielectric constant of about 2.8) suggest that such films are candidate materials for a number of advanced technological applications, in particular as interlevel insulators with a low permittivity coefficient for next-generation giga-and terabit silicon memory circuits [17].…”

Advances of rejected unsymmetrical dimethylhydrazine(UDMH) reuse technology

“…Studies [24][25] have been reported that thin-films of silicon carbonitride were synthesized by silicon derivatives of UDMH ((CH 3 ) 2 HSiNHN(CH 3 ) 2 (DMDMSH),(CH 3 ) 2 Si[NHN(CH 3 ) 2 ] 2 (D M-bis-DMHS)) using method of remote-plasma chemical vapor deposition(RPCVD). The ratio of N Si determined the structure of the films.…”