Plasma Damage of Gate Oxide through the Interlayer Dielectric

Hirao, S.; Sugiyama, Tatsuo; Yoshida, Takehiro; Yano, Kousaku; Nomura, Noboru

doi:10.7567/ssdm.1993.a-3-3

Cited by 5 publications

(3 citation statements)

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“…Historically, there is well documented material from a wide range of sources, indicating PECVD of oxide layers as a charging dangerous step [7,8,9]. Direct correlation of large antenna capacitors with reliability of DRAM arrays, affected by the oxide PECVD charging was even reported [7], confirming a significance ofthe problem.…”

Section: Charging-related Breakdownmentioning

confidence: 92%

“…Earlier studies suggested stress and charge collection on the antenna due to a leakage through imperfections and conducting paths (cracks) in the layer being deposited [8]. One oflater works indicated photo-generation and carrier separation in the deposited layer under UV plasma radiation, resulting in the charge collection and potential build-up on the insulated antenna [12].…”

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confidence: 98%

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<title>In-line testing of antenna-type test structures for separation of sources of process-induced damage</title>

1997

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As process complexity and number of plasma processing steps increase, process-induced charging damage becomes an emerging issue in continuously scaling device manufacturing. It is important, therefore, to be able to pinpoint most of potential sources of plasma charging-induced damage. The most commonly used approach involves processing and testing of several modules of antenna-type transistors, with charge sensitive antennas defmed and exposed to plasma at various stages of processing. Subsequent analysis of damage allows determination of the processing level at which most of damage occurred.This work presents an alternative and complementary approach to assess potential sources of charging damage. This approach is based on in-line testing of gate oxide integrity of a MOS transistor structure with a charge collecting antenna. Gate oxide integrity tests performed after poly-silicon salicidation and after metal-l level are used to separate the effect of poly etch and inter-layer dielectric (ILD) deposition. It is shown that by the in-line testing of silicided poly antennas the effect of charging damage due to plasma-enhanced chemical vapor deposition (PECVD) of oxide can be unambiguously determined. The fingerprint of PECVD-induced charging is further documented by the surface charge analysis performed on oxidized silicon wafers exposed to PECVD oxide deposition.

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Section: Charging-related Breakdownmentioning

confidence: 92%

mentioning

confidence: 98%

<title>In-line testing of antenna-type test structures for separation of sources of process-induced damage</title>

1997

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“…15,16,18) Varying RF power in the deposition may lead to plasma-induced damage to the transistor. 19) On the other hand, the problem hardly occurs with varying gas flow rate. Thus, optimizing gas flow rate in the PECVD of SiN films is suitable for film stress control.…”

Section: Introductionmentioning

confidence: 99%

Effect of N₂ Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH₄–NH₃–N₂–He Gas Mixture on Stress Relaxation of Silicon Nitride

Murata¹,

Miyagawa²,

Matsuura³

et al. 2010

Jpn. J. Appl. Phys.

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The effects of N2 gas flow ratios in silicon nitride deposition with SiH4–NH3–N2–He gas mixtures at a temperature of 275 °C on stress relaxation have been investigated. We have demonstrated that film stress can be controlled in the range from -692 MPa (compression) to 170 MPa (tension) by increasing N2 gas flow ratio. From the evaluation of the composition ratio of N/Si, film density, and bonding structure, the relationships between film stress and these properties are investigated. The amount of nitrogen incorporated into the film as N–H bonds increased with increasing N2 flow ratio, resulting in a higher composition ratio of N/Si. At a higher N2 gas flow ratio, excess N2 gas in the plasma may disturb the ion bombardment of ionized species on the film surface, resulting in a decrease in the film density. The higher N2 gas flow ratio leads to the generation of a Si–N bonding structure with a larger bond angle at the nitrogen atom site due to bond-strain relaxation, leading to a higher frequency of Si–N stretching vibration. Therefore, a nitrogen-richer SiN film with many N–H bonds and a lower film density exhibits bonding structures with a lower bond strain, leading to the relief of film stress.

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Mechanism of Plasma Charging Damage III

Cheung¹

2001

Plasma Charging Damage

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Plasma Damage of Gate Oxide through the Interlayer Dielectric

Cited by 5 publications

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<title>In-line testing of antenna-type test structures for separation of sources of process-induced damage</title>

<title>In-line testing of antenna-type test structures for separation of sources of process-induced damage</title>

Effect of N₂ Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH₄–NH₃–N₂–He Gas Mixture on Stress Relaxation of Silicon Nitride

Mechanism of Plasma Charging Damage III

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Plasma Damage of Gate Oxide through the Interlayer Dielectric

Cited by 5 publications

References 0 publications

<title>In-line testing of antenna-type test structures for separation of sources of process-induced damage</title>

<title>In-line testing of antenna-type test structures for separation of sources of process-induced damage</title>

Effect of N2 Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH4–NH3–N2–He Gas Mixture on Stress Relaxation of Silicon Nitride

Mechanism of Plasma Charging Damage III

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Effect of N₂ Gas Flow Ratio in Plasma-Enhanced Chemical Vapor Deposition with SiH₄–NH₃–N₂–He Gas Mixture on Stress Relaxation of Silicon Nitride