Plasma cleaning and its application in microwave module wire bonding technology

Wide range detector of plasma induced charging effect for advanced CMOS BEOL processes

“…Advanced FinFET logic processes have become more complex for realizing more tightly packed transistors in multi-functional and more powerful Si chips. Reactive ion etching steps enhanced by plasma [4,5] become inevitable in advanced nano-scale processes for achieving high aspect ratio structures which are essential for high packing density circuits [6]. For CMOS technology nodes beyond 45 nm, the transistor gates changed from the conventional poly-silicon gate with silicon dioxide to high-k metal gate stacks [7,8].…”

Wide Range Detector of Plasma Induced Charging Effect for Advanced CMOS BEOL Processes

“…Advanced FinFET logic processes has become more complex for realizing more tightly packed transistors in multi-functional and more powerful Si chips. Reactive ion etching steps enhanced by plasma [4][5] become inevitable in advanced nano-scale processes for achieving high aspect ratio structures which are essential for high packing density circuits [6]. For CMOS technology nodes beyond 45nm, the transistor gates changed from the conventional poly-silicon gate with silicon dioxide to high-k metal gate stacks [7][8].…”