Plasma Charge Accumulative Model in Quantitative FinFET Plasma Damage

Tsai, Yi-Pei; Shih, J.R.; King, Ya‐Chin; Lin, Chrong Jung

doi:10.1109/ted.2019.2919454

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Cited by 7 publications

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“…Before the in-chamber e-beam exposure, the FG charge (Q FG ) induced from the semiconductor manufacturing process steps [ 27 , 28 ] must be cleared out. Here, an initialization step by baking the detector chips at 250 degrees Celsius is conducted, as the measurement data corroborated in Fig.…”

Section: Resultsmentioning

confidence: 99%

Detectors Array for In Situ Electron Beam Imaging by 16-nm FinFET CMOS Technology

et al. 2021

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A novel in situ imaging solution and detectors array for the focused electron beam (e-beam) are the first time proposed and demonstrated. The proposed in-tool, on-wafer e-beam detectors array features full FinFET CMOS logic compatibility, compact 2 T pixel structure, fast response, high responsivity, and wide dynamic range. The e-beam imaging pattern and detection results can be further stored in the sensing/storage node without external power supply, enabling off-line electrical reading, which can be used to rapidly provide timely feedback of the key parameters of the e-beam on the projected wafers, including dosage, accelerating energy, and intensity distributions.

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Section: Resultsmentioning

confidence: 99%