Plasma characterization of the gas-puff target source dedicated for soft X-ray microscopy using SiC detectors

Torrisi, A.; Wachulak, P.; Torrisi, L.; Bartnik, A.; Węgrzyński, Łukasz; Fiedorowicz, Henryk

doi:10.1515/nuka-2016-0024

Cited by 8 publications

(4 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The advantage to employ this gaseous source to produce extreme ultra violet (EUV) and soft X-rays (SXR) are different, such as the small maintenance costs as well as the compact construction and the possibilities to perform experiments in a laboratory environment producing a "debris free" plasma, at a density lower than the critical one. Other advantages of the gas-puff source are mentioned in [9]. The suitability of high-quality epitaxial layers allows the fabrication of high-performance SiC detectors based on Schottky diodes and p-n junctions [10].…”

mentioning

confidence: 99%

Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Torrisi

Wachulak²,

Fiedorowicz

et al. 2020

J. Inst.

View full text Add to dashboard Cite

A: Silicon carbide detectors were employed to characterize the plasma produced by laser interaction with a double stream gas-puff target source. A 10 Hz repetition rate Nd:YAG laser (1064 nm wavelength, 0.69 J pulse energy and 3 ns pulse duration) was employed to irradiate different gas-puff targets (Argon, Xenon and Sulfur hexafluoride), at different pressures (1-10 bar), emitting plasma radiation in different wavelength ranges (ultraviolet, extreme ultraviolet and soft X-rays). The emission produced by the laser radiation was properly filtered (employing Titanium, Aluminium, Zirconium and Calcium fluoride filters), to narrow down the broad-band emission of the generated plasma. The SiC detectors' signals were compared with a calibrated traditional silicon detector evaluating their differences, i.e. taking into account the plasma stability, the time trace profile and the characteristics of the gas-puff target source. The obtained results, which will be presented and discussed, allow to improve the geometry and configuration of the SiC detectors avoiding saturation and charge recombination effects and getting a better proportionality to the energy and fluence of the detected radiations. K: Detectors for UV, visible and IR photons; Plasma generation (laser-produced, RF, x ray-produced); Radiation monitoring; X-ray detectors 1Corresponding author.

show abstract

mentioning

confidence: 99%

Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Torrisi

Wachulak²,

Fiedorowicz

et al. 2020

J. Inst.

View full text Add to dashboard Cite

show abstract

“…The presented SiC detectors can be employed to monitor plasma produced from compact laboratory sources and from large facilities such as accelerators and for transport of charge particle beams. They can be employed to analyze the ion-gas and ion-thin foil interactions in stripper systems producing SXR emission, for RBS, ERDA, NRA, and PIXE analysis, for electron and ion detection in the time-of-flight configuration, and for spectroscopy, monitoring the production of characteristic x-ray emission, as reported widely in the literature [6,7,8,9,[11][12][13][14][15][16]21]. SiC detectors present a significant advantage with respect to the traditional Si detector, due to the higher-energy band gap, which makes the detector less sensitive to the VIS light produced by the laserproduced plasma.…”

Section: Discussionmentioning

confidence: 99%

“…More details about the source employed are described in Refs. [19][20][21]. An AXUV-HS1 Si photodiode (mentioned in the paper as HS1) from IRD, USA, with an active area of 0.05 mm 2 and a capacitance of 20 pF, and a SiC detector, with an active area of 6.35 mm 2 and a junction capacitance of 100 pF, were placed at a distance of 108 and 170 mm, respectively, from the gas-puff source.…”

Section: Methodsmentioning

confidence: 99%

Monitoring of the plasma generated by a gas-puff target source

Torrisi¹,

Wachulak

Fiedorowicz

et al. 2019

Phys. Rev. Accel. Beams

View full text Add to dashboard Cite

A 10-Hz repetition rate, Nd:YAG pulsed laser (λ ¼ 1064 nm, pulse energy of 0.69 J, pulse duration of 3 ns) irradiated a Xe double-stream gas-puff target source. The interaction gives rise to the formation of plasma and emission of soft x-ray and extreme ultraviolet radiation. The produced plasma was investigated and characterized by a silicon carbide (SiC) and a commercial silicon (Si) detector, applying different spectral filters. Some parameters such as the plasma stability and its evolution (time trace profile and pulse time duration) are presented and discussed, evidencing pros and cons of the employment of SiC detectors with respect to the traditional Si for laser-generated plasma diagnostic.

show abstract

“…Their higher gap energy of 3.3 eV blinds them to visible light, but not to UV and X-rays, their leakage current is of the order of 1 pA at room temperature, they can also operate at high temperature and their radiation damage occurs at high doses. Other SiC properties and construction aspects are given in the literature [20,21]. SiCs are connected in time-of-flight (TOF) configuration in order to give the ion energy using the known flight distance and the recording of the spectra on a fast storage oscilloscope.…”

Section: Jinst 15 C03056mentioning

confidence: 99%

Target normal sheath ion acceleration by fs laser irradiating metal/reduced graphene oxide targets

Torrisi¹,

Rosiński²,

Cutroneo³

et al. 2020

J. Inst.

View full text Add to dashboard Cite

Target normal sheath ion acceleration is applied with a high contrast fs laser irradiating advanced targets based on thin metallic films (Al, Cu, Ag and Au) covering micrometric foils of reduced graphene oxide (rGO). The laser intensity is of about 10 18 W/cm 2 and the laser focal position with respect to the target surface is optimized to have the maximum proton acceleration. Plasma diagnostics are investigated using time-of-flight technique employing SiC detectors, ion collectors, and gaf-chromic films. Micrometric aluminum absorbers were employed to separate the faster proton detection by other accelerated ions. At the optimized laser focal position, the maximum proton acceleration of 2.5 MeV and 3.0 MeV energy was obtained using Ag(200 nm) and Au(200 nm) covering rGO(7 µm) targets, respectively. The high proton energy is due to the high electrical and thermal conductivity and high mechanical resistance of the used rGO foils and to the high plasma electron density of the target. K: Plasma diagnostics -charged-particle spectroscopy; Plasma diagnostics -probes; Plasma generation (laser-produced, RF, x ray-produced) 1Corresponding author.

show abstract

Plasma characterization of the gas-puff target source dedicated for soft X-ray microscopy using SiC detectors

Cited by 8 publications

References 21 publications

Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Monitoring of the plasma generated by a gas-puff target source

Target normal sheath ion acceleration by fs laser irradiating metal/reduced graphene oxide targets

Contact Info

Product

Resources

About