“…Our room-temperature sputtered TiN films are apparently comparable to the epitaxial TiN and superior to films prepared by both high-temperature sputtering and low-temperature ALD in plasmonic character. We believe that the strong plasmonic character of our room-temperature sputtered TiN films is enabled by the close proximity of our samples to the plasma during deposition providing the necessary high energy reactive ions and activated species in lieu of substrate heating or biasing 24 . Note that the observed strong plasmonic character of our TiN is in sharp contrast to the dielectric properties of titanium oxynitride (TiO x N y ) 25 , which usually exhibits double epsilon-near-zero (ENZ) characteristics without substrate heating and special chamber preparation.…”
Titanium nitride (TiN) has recently emerged as an attractive alternative material for plasmonics. However, the typical high-temperature deposition of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potential applications and prevented its integration into existing CMOS device architectures. Here, we demonstrate highly plasmonic TiN thin films and nanostructures by a room-temperature, low-power, and bias-free reactive sputtering process. We investigate the optical properties of the TiN films and their dependence on the sputtering conditions and substrate materials. We find that our TiN possesses one of the largest negative values of the real part of the dielectric function as compared to all other plasmonic TiN films reported to date. Two-dimensional periodic arrays of TiN nanodisks are then fabricated, from which we validate that strong plasmonic resonances are supported. Our room-temperature deposition process can allow for fabricating complex plasmonic TiN nanostructures and be integrated into the fabrication of existing CMOS-based photonic devices to enhance their performance and functionalities.
“…Our room-temperature sputtered TiN films are apparently comparable to the epitaxial TiN and superior to films prepared by both high-temperature sputtering and low-temperature ALD in plasmonic character. We believe that the strong plasmonic character of our room-temperature sputtered TiN films is enabled by the close proximity of our samples to the plasma during deposition providing the necessary high energy reactive ions and activated species in lieu of substrate heating or biasing 24 . Note that the observed strong plasmonic character of our TiN is in sharp contrast to the dielectric properties of titanium oxynitride (TiO x N y ) 25 , which usually exhibits double epsilon-near-zero (ENZ) characteristics without substrate heating and special chamber preparation.…”
Titanium nitride (TiN) has recently emerged as an attractive alternative material for plasmonics. However, the typical high-temperature deposition of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potential applications and prevented its integration into existing CMOS device architectures. Here, we demonstrate highly plasmonic TiN thin films and nanostructures by a room-temperature, low-power, and bias-free reactive sputtering process. We investigate the optical properties of the TiN films and their dependence on the sputtering conditions and substrate materials. We find that our TiN possesses one of the largest negative values of the real part of the dielectric function as compared to all other plasmonic TiN films reported to date. Two-dimensional periodic arrays of TiN nanodisks are then fabricated, from which we validate that strong plasmonic resonances are supported. Our room-temperature deposition process can allow for fabricating complex plasmonic TiN nanostructures and be integrated into the fabrication of existing CMOS-based photonic devices to enhance their performance and functionalities.
“…Optimization of the argon microplasma process and gelatin and GO concentrations were the key factors in the entire process of gel-GO hydrogel fabrication along with various parameters including current, voltage, gas flow rate, conductivity, time of treatment, etc., were thoroughly investigated periodically to obtain the desired scaffold. The current and voltage are interdependent and affect the ionization of the plasma gas as well as free radical production ( Bunshah & Deshpandey, 1985 ). It is important to maintain a steady current and voltage for uniform glow plasma discharge.…”
Toxicity issues and biocompatibility concerns with traditional classical chemical cross-linking processes prevent them from being universal approaches for hydrogel fabrication for tissue engineering. Physical cross-linking methods are non-toxic and widely used to obtain cross-linked polymers in a tunable manner. Therefore, in the current study, argon micro-plasma was introduced as a neutral energy source for cross-linking in fabrication of the desired gelatin-graphene oxide (gel-GO) nanocomposite hydrogel scaffolds. Argon microplasma was used to treat purified gelatin (8% w/v) containing 0.1∼1 wt% of high-functionality nano-graphene oxide (GO). Optimized plasma conditions (2,500 V and 8.7 mA) for 15 min with a gas flow rate of 100 standard cm3/min was found to be most suitable for producing the gel-GO nanocomposite hydrogels. The developed hydrogel was characterized by the degree of cross-linking, FTIR spectroscopy, SEM, confocal microscopy, swelling behavior, contact angle measurement, and rheology. The cell viability was examined by an MTT assay and a live/dead assay. The pore size of the hydrogel was found to be 287 ± 27 µm with a contact angle of 78° ± 3.7°. Rheological data revealed improved storage as well as a loss modulus of up to 50% with tunable viscoelasticity, gel strength, and mechanical properties at 37 °C temperature in the microplasma-treated groups. The swelling behavior demonstrated a better water-holding capacity of the gel-GO hydrogels for cell growth and proliferation. Results of the MTT assay, microscopy, and live/dead assay exhibited better cell viability at 1% (w/w) of high-functionality GO in gelatin. The highlight of the present study is the first successful attempt of microplasma-assisted gelatin-GO nano composite hydrogel fabrication that offers great promise and optimism for further biomedical tissue engineering applications.
“…[15] Excited species could induce the exhibition and incorporation of functional groups on gelatin chains and GO sheets in line with radical and ionic chain-growth polymerization to create randomly structured and crosslinked films on surfaces exposed to the plasma. [16][17][18] Furthermore, the hydrogels formed by plasma treatment are generally highly crosslinked, hence thermally stable, mechanically tough, and chemically inert. [18] With these numerous advantages, argon plasma jet was first attempted to fabricate physically crosslinked gelatin-GO hydrogels and produced encouraging results.…”
Nonthermal atmospheric pressure plasma processes, including an interaction between plasma and liquid phases, are employed to induce crosslinked gelatin-graphene oxide composite hydrogels. The properties of thin-film hydrogel-forming postplasma treatment are analyzed by infrared spectroscopy, rheology, scanning electron microscope, and in vitro studies. The plasma-treated hydrogel (PT) exhibits an excellent gel strength with storage modulus up to 341 kPa and thermal stability of gel-sol transition at 65°C, elongated degradation time, and favorable cell viability. The practical application of PT demonstrates an efficient encapsulation and sustainable release of alendronate for at least 21 days. The results show that using nonthermal plasmas can be regarded as an alternative physical method to fabricate composite hydrogels for promising applications in drug carriers and biomedicine.
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