Plasma assisted molecular beam epitaxy growth of GaN

Einfeldt, S.; Birkle, U.; Thomas, Candice; Fehrer, M.; Heinke, H.; Hommel, D.

doi:10.1016/s0921-5107(97)00200-6

Cited by 21 publications

(12 citation statements)

References 17 publications

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“…Growth conditions were varied over a wide range resulting in a set of samples with different defect structures. Typical growth parameters are described in detail elsewhere [4,5]. Growth parameters for MOCVD samples from University of California at Santa Barbara (UCSB), USA and Nichia, Japan used for comparative investigations can be found in Refs.…”

Section: Methodsmentioning

confidence: 99%

Analysis of the Defect Structure of Epitaxial GaN

Heinke¹,

Kirchner

Einfeldt

et al. 1999

phys. stat. sol. (a)

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Section: Methodsmentioning

confidence: 99%

Analysis of the Defect Structure of Epitaxial GaN

Heinke¹,

Kirchner

Einfeldt

et al. 1999

phys. stat. sol. (a)

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“…The samples under study were Si-, C-, and Mg-doped GaN films of about 1 µm thickness grown on sapphire (0001) substrates by MBE; the details are given elsewhere [7]. The Mg-doped samples A and B were p-conductive with a hole concentration at room temperature of 3.7⋅10 17 cm -3 and 1.4⋅10 17 cm -3 , respectively, whereas the other two samples were compensated but n-conductive.…”

Section: Methodsmentioning

confidence: 99%

Influence of Doping on the Lattice Dynamics of Gallium Nitride

Kaschner

Siegle

Hoffmann

et al. 1999

MRS Internet j. nitride semicond. res.

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We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, grown by molecular beam epitaxy (MBE). The influence of the different dopants on strain and freecarrier concentration was investigated. Furthermore, we report on several local vibrational modes (LVM) around 2200 cm -1 in Raman spectra of highly Mg-doped GaN. A possible explanation of these high-energy modes in terms of hydrogen-related vibrations is given. We also found a variety of new structures in the range of the GaN host lattice phonons. Secondary ion mass spectroscopy (SIMS) was applied to determine the concentration of magnesium and unintentionally incorporated hydrogen.

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“…[23][24][25][26] It should be pointed out that the nitrogen flux is difficult to directly measure, and hence it is often indirectly deduced. Myoung et al 23 and Einfeldt et al 24 derived their fluxes based on the assumption that the sticking probability of nitrogen atoms was unity. Their data, therefore, cannot be directly compared with our results.…”

Section: B N:ga Flux Ratio Effectsmentioning

confidence: 99%

“…Inappropriate N:Ga flux ratio was shown to result in nonstoichiometric films. [23][24][25][26] The atomic processes responsible for this are not clear.…”

Section: Introductionmentioning

confidence: 99%

Atomic assembly during GaN film growth: Molecular dynamics simulations

et al. 2006

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Molecular dynamics simulations using a recently developed Ga-N Tersoff type bond order interatomic potential have been used to investigate the growth mechanisms of ͑0001͒ wurtzite GaN films from thermalized atomic gallium and nitrogen fluxes. The crystallinity and stoichiometry of the deposited wurtzite lattice structures were determined as a function of growth temperature and N:Ga flux ratio. The lattice perfection was found to improve as the growth temperature was increased to 500 K. At a fixed growth temperature, the lattice quality and stoichiometry both reached optimum as the N:Ga ratio approached a value between two and three. The optimum flux ratio increased with increasing growth temperature. These three observations are consistent with experimental studies of growth on wurtzite phase promoting substrates. The atomic assembly mechanisms responsible for these effects have been explored using time-resolved atom position images. The analysis revealed that high quality crystalline growth only occurred when off-lattice atoms ͑which are usually associated with amorphous embryos or defect complexes͒ formed during deposition were able to move to unoccupied lattice sites by thermally activated diffusion processes. The need for a high N:Ga flux ratio to synthesize stochiometric films arises because many of the nitrogen adatoms that impact N-rich ͑0001͒ GaN surfaces are re-evaporated. Reductions of the substrate temperature reduce this reevaporation and as a result, the optimum N:Ga ratio for the stoichiometric film formation ͑and best lattice perfection͒ was reduced as the growth temperature was decreased.

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Plasma assisted molecular beam epitaxy growth of GaN

Cited by 21 publications

References 17 publications

Analysis of the Defect Structure of Epitaxial GaN

Analysis of the Defect Structure of Epitaxial GaN

Influence of Doping on the Lattice Dynamics of Gallium Nitride

Atomic assembly during GaN film growth: Molecular dynamics simulations

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