Plasma-assisted chemical vapor deposition and characterization of high quality silicon oxide films

Nguyen, S.; Dobuzinsky, D.; Döpp, D.; Gleason, R. T.; Gibson, M.; Fridmann, S. A.

doi:10.1016/0040-6090(90)90211-u

Cited by 34 publications

(14 citation statements)

References 15 publications

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“…5 Finally, one may notice that the very specific ESR signature of the P b -type interface defects is invoked here as criterion for technological interface quality. 31 On the experimental side, it falls in line with previous notions that with oxide layers deposited at reduced T on Si, low interface trap density can only be obtained by deposition on thin oxides pregrown by standard high-T processing 32 -effectively stating that only thermally grown Si/SiO 2 meets microelectronics requirements-or else, by providing a sufficiently higher thermal budget. This criterion finds support from other disciplines.…”

Section: Discussionsupporting

confidence: 84%

Defects at the interface of (100)Si with ultrathin layers of SiOx, Al2O3, and ZrO2 probed by electron spin resonance

Stesmans¹,

Afanasʼev²

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Thermally induced interface degradation in (100) and (111) Si/SiO 2 analyzed by electron spin resonance An electron spin resonance study has been carried out on ͑100͒Si/SiO x /ZrO 2 and ͑100͒Si/Al 2 O 3 /ZrO 2 stacks with nm-thin dielectric layers grown by the atomic layer chemical vapor deposition method at 300°C. This reveals the Si dangling bond type centers P b0 , P b1 as prominent defects at the ͑100͒Si/dielectric interface in both types of structures. While reassuring for the Si/SiO x /ZrO 2 case, this P b0 , P b1 fingerprint, archetypal for the thermal ͑100͒Si/SiO 2 interface, indicates that the as-deposited ͑100͒Si/Al 2 O 3 interface is basically ͑100͒Si/SiO 2 -like. Yet, as exposed by the salient spectroscopic properties of the P b0 , P b1 defects, the interfaces are found to be in an enhanced ͑less relaxed͒ stress state, generally characteristic of low-temperature Si/SiO 2 fabrication. The thermal behavior has been addressed by subjecting the sample stacks to heat treatments in vacuum or O 2 ambient. Based on the P b0 , P b1 criterion, it is found that standard thermal Si/SiO 2 interface properties may be approached by appropriate annealing ͑у650°C͒ in vacuum in the case of Si/SiO x /ZrO 2 . Yet, O 2 ambient is required for Si/Al 2 O 3 , indicating that the initial interface is too abrupt to enable thermal interfacial rearrangement without growth of an additional SiO x interlayer. A minimal SiO x interlayer thickness ͑0.5 nm͒ appears requisite. Thus, Si/high-metal oxide structures may be endowed with device quality interfaces with sub-nm thin SiO x interlayer, which may support the applicability of high-metal oxides. Obviously, though, the ͑inherent͒ occurrence of an SiO x interlayer will impair the minimal equivalent SiO 2 thickness that may ultimately be realized with an envisioned high-material.

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Section: Discussionsupporting

confidence: 84%

Defects at the interface of (100)Si with ultrathin layers of SiOx, Al2O3, and ZrO2 probed by electron spin resonance

Stesmans¹,

Afanasʼev²

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Apart from this beneficial effect, the highly reactive character of the SiH/0 2 system results in poor step coverage of micro-sized trenches (non-conformal deposition) [3]. Moderation of SiH/0 2 reaction by addition of certain radical scavengers (e.g., C 2 H 2 ) [4] or substitution of SiH 4 by metal organic precursors [5,6], mainly TEOS, are possible solutions to improve the step coverage conformality. Production of conformal high-quality Si0 2 films from the SiH/0 2 reaction is also possible through a properly reactor design and choice of the process parameters [7,8].…”

Section: Introductionmentioning

confidence: 99%

Study of the growth mechanisms of low-pressure chemically vapour deposited silica films

et al. 1999

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We have studied the surface morphology evolution of Si0 2 films grown at 20 nm/min in a low-pressure chemical vapour deposition reactor from SiHi02 mixtures at low (611 K) and high (723 K) temperatures. Films have been deposited for times ranging from 10 min up to 48 hours. It is shown that the SiO, growth at high temperature becomes stable, whereas at low temperature it is unstable (i.e., the surface roughness increases continuously with deposition time). This clear difference is explained on the basis of the different growth mechanisms operating under both experimental conditions. These results are compared with the predictions of the few theoretical works on growth evolution by chemical vapour deposition.

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“…O+O3=20~ (k3) [3] where kl, kf, and k3 are the rate constants for each reaction. The composition profile of ozone in the gas gap (between the showerhead and the susceptor) of the SACVD deposition reactor is calculated from the rate expressions involving these three reactions by integrating the rate equations and including the temperature-dependent gas velocity in the calculation.…”

Section: Resultsmentioning

confidence: 99%

Dependence of Film Properties of Subatmospheric Pressure Chemical Vapor Deposited Oxide on Ozone‐to‐Tetraethylorthosilicate Ratio

Huang

Kwok

Witty

et al. 1993

J. Electrochem. Soc.

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Subatmospheric chemical vapor deposited (SACVD) tetraethylorthosilicate (TEOS) oxide provides excellent deposition profiles for submicron device structures. The film properties, such as wet etch rate, shrinkage, and cracking resistance, as well as step-coverage, depend strongly on the Q-to-TEOS ratio. The SACVD oxide film quality correlates to step-coverage and gap-filling ability, and both can be controlled by varying the Q-to-TEOS ratio.In very large scale integrated (VLSI) manufacturing, multilevel metallization schemes require dielectrics with excellent step-coverage, gap-filling, and planarizing capability, and at the same time good film properties. In particular, subatmospheric pressure CVD TEOS/O3 oxide t'2 has demonstrated excellent step-coverage due to the surfacelimited nature of its reaction kinetics. For example, the SACVD oxide is capable of submicron gap-filling (at 0.4 ~m metal line spacing with 2.5:1 aspect ratio), whereas the other widely used oxide, plasma-enhanced TEOS (PECVD) oxide 3 is not. However, the SACVD oxide provides different film quality compared to PECVD oxide. 3 The SACVD films are similar to those obtained with TEOS/O3 atmospheric pressure chemical vapor deposition (APCVD). 4-7 The SACVD films have higher wet etch rates and shrinkage rates than the PECVD films, indicating that the SACVD oxides are porous films. Film quality of the SACVD oxide can be improved by optimizing the process parameters, including deposition temperature and ozone-to-TEOS ratio. High deposition temperature results in better film quality. t,2 However, high temperature is not practical for gapfilling between metal lines in device fabrication. Ozone-to-TEOS ratio therefore becomes the most important factor in determining the film quality of the SACVD oxide. The results presented demonstrate that the step-coverage and film quality of the SACVD oxides correlate to each other, and they also depend on underlying base materials. ~' 9 Both step-coverage and film properties show significant dependence on the Q-to-TEOS ratio. Here, step-coverage, as well as film properties such as wet etch rate, film shrinkage, stress-temperature behavior, and cracking resistance of the SACVD oxide are investigated as a function of the O3-to-TEOS ratio. ExperimentalThe SACVD oxide films were deposited in an Applied Materials Precision 5000 CVD reactor. ~ The process gas was introduced from a showerhead over the wafer, and was exhausted through a throttled valve below the wafer. TEOS vapor was supplied to the reactor by bubbling a carrier gas, helium, through a TEOS bubbler which is temperature controlled at 48~ Ozone is generated to between 8 to 9 weight percent in oxygen by an ozonizer, Onoda, Model OR-4ZA, and added to TEOS/He gas before the showerhead. The SACVD oxide was deposited at a pressure of 600 Torr and a deposition temperature of 400~ using an electrode spacing of 5.6 mm. Two types of substrates were used for this study. One was bare silicon (p-type with boron dopant, <100> orientation); the other was plasma-enhanced TEOS ...

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Plasma-assisted chemical vapor deposition and characterization of high quality silicon oxide films

Cited by 34 publications

References 15 publications

Defects at the interface of (100)Si with ultrathin layers of SiOx, Al2O3, and ZrO2 probed by electron spin resonance

Defects at the interface of (100)Si with ultrathin layers of SiOx, Al2O3, and ZrO2 probed by electron spin resonance

Study of the growth mechanisms of low-pressure chemically vapour deposited silica films

Dependence of Film Properties of Subatmospheric Pressure Chemical Vapor Deposited Oxide on Ozone‐to‐Tetraethylorthosilicate Ratio

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