Plasma anodization as a dry low temperature technique for oxide film growth on silicon substrates

Sugano, Takuo

doi:10.1016/0040-6090(82)90184-5

Cited by 19 publications

(5 citation statements)

References 16 publications

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“…[4][5][6] For example, anodic oxidation of Si at 200 -600 C in an oxygen plasma provided oxidation rate of 1-20 nm/min where positive DC voltage (50 -150 V) is applied to Si substrate. [7][8][9] However, this technique gives rise to metal contamination and damages in the oxide and is not compatible with large wafer processes. Beside the plasma anodization, the plasma oxidation is done simply exposing a Si wafer without DC bias to oxygen plasma, using electronic cyclotron resonance (ECR) plasma 5,10) and a microwave downstream plasma.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of Oxidation of Si Surfaces Exposed to O₂/Ar Microwave-Excited Plasma

Hasegawa

Yamauchi

Sugai

2007

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Plasma oxidation of 200-mm-diameter Si wafer surface at low temperature (400 °C) with use of high-density microwave plasma in O2/Ar gas was investigated. Dependence of the time-averaged oxidation rate on the percentage O2 showed a maximum value of 0.95 nm/min at a few % O2 in Ar. However, the measured O radical density was considerably low in this condition, and hence the O radical is not considered to be a key species in the plasma oxidation. A good correlation was found between the oxidation rate and the electron density; the oxidation rate averaged for 10 min discharge is proportional to the square root of the electron density measured near the Si wafer. The experimental results are basically explained by the Jorgensen-Mott model: in a presence of electron flux from plasma, the O2 molecule adsorbed on SiO2 surface is dissociated into negative ions which are transported to the SiO2–Si interface.

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Section: Introductionmentioning

confidence: 99%

Mechanism of Oxidation of Si Surfaces Exposed to O₂/Ar Microwave-Excited Plasma

Hasegawa

Yamauchi

Sugai

2007

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“…10% 02 addition.--No etching occurs at high level 02 addition, ->6%; at these high 02 concentrations the plasma oxidizes the polysilicon surface(20), possibly similar to Oe plasma anodization process(21). Since C12 plasmas are very selective with respect to oxide(7,8), the surface oxide layer stops the etching.…”

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confidence: 99%

Effects of O 2 Feed Gas Impurity on Cl2 Based Plasma Etching of Polysilicon

Zau

Sawin

1992

J. Electrochem. Soc.

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The effect of low level, between 0.001 and 10%, O2 addition on C12 based plasma etching of polysilicon in a parallelplate etcher was investigated. Three strong effects on the etching rate of unmasked polysilicon were observed. Low level O2 addition, 0.1-2%, enhanced the etching rate up to 4 times that of the pristine system. High level 02 addition, >-6%, stopped the etching altogether. Pure C12 plasma etching rates were enhanced by previous runs with 02 addition; a hysteresis effect. The hysteresis was reduced by subsequent system plasma exposure. Running a CF4 plasma after 02 addition runs cleaned the system and returned it to its pristine state. The stopping of etching at high O2 levels was attributed to plasma oxidation of the polysilicon surface; since C12 plasmas are very selective with respect to oxide, the etching is stopped by the surface oxide. Both the low level 02 etching rate enhancement and the hysteresis effect can be attributed to the deposition of an oxychloride film on the etcher surfaces. The oxychloride film, formed by reaction between the etching products and the added O=, passivates the interior etcher surfaces against C1 surface recombination, and, therefore, reduces the major C1 loss mechanism. The gas-phase C1 concentration increases, which in turn increases the polysilicon etching rate. These results demonstrate the importance of etcher surface condition and of the etching product deposition. Photoresist masked polysilicon films etched in the same configuration showed similar 02 addition dependencies as unmasked polysilicon films. The main difference is that the 02 addition effect thresholds are higher with the photoresist mask due to the consumption of the added 02 by photoresist etching. Unmasked polysilicon film etched in a commercial etcher, Applied Materials Precision 5000, under magnetically enhanced reactive ion etching configuration, exhibited the same trends as in the parallel-plate research etcher. This indicates that results obtained from the parallel-plate research etcher can be generalized to other configurations.

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“…It is to be noted, for comparison, that when an initial ZrQ underlayer (or cap) was used (28), the mechanism of diffusion was reported to have been affected. Hence, in the absence of further information, from the oxygen marker experiments alone it could be postulated (erroneously as it turns out) that oxidation proceeds by oxygen diffusing inward to the Si-SiQ interface and silicon diffusing outward to the outer SiO2 surface (26,27), Fig. 5c.…”

Section: Oxidationmentioning

confidence: 99%

“…In studies of the mechanism of species motion in the oxide in plasma anodization Systems, it was reported (26-28) using oxygen isotope marker experiments that two approximately equal size oxygen isotope peaks were detected in the grown SiQ, one at the outer SiO2 surface and the other at the Si-SiO2 interface. These two peaks have been interpreted by some of the authors (26,27) as indicative of simultaneous motion of silicon and oxygen ions (and/or their vacancies) through the SiO2 during oxidation. However, others (28) have concluded that the peak observed at the Si-SiO2 interface was due to the diffusion of oxygen through the SiO2, while attributing the second peak observed at the SiO2-plasma interface to a partial replacement reaction involving oxygen isotope exchange with the existing SiO2.…”

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confidence: 95%

Species Charge and Oxidation Mechanism in the “Cathodic” Plasma Oxidation of Silicon

Eljabaly

Reisman

1991

J. Electrochem. Soc.

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This study discusses the sign of the charge of the gas phase species involved in the plasma oxidation of silicon and the oxidation mechanism itself in a system of a type previously reported in which oxidation occurs on a silicon surface facing. away from a confined plasma. Based on grid-biasing experiments, it was found that the gas-phase oxygen species responsible for oxidation are positively charged, in marked distinction to what has been proposed for plasma anodization processes. From 0 TM and Si 3~ double-marker experiments, coupled with other information, the oxidation process was found to proceed by oxygen ion transport to the Si-SiO2 interface with no outdiffusion of silicon being detected.

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Plasma anodization as a dry low temperature technique for oxide film growth on silicon substrates

Cited by 19 publications

References 16 publications

Mechanism of Oxidation of Si Surfaces Exposed to O₂/Ar Microwave-Excited Plasma

Mechanism of Oxidation of Si Surfaces Exposed to O₂/Ar Microwave-Excited Plasma

Effects of O 2 Feed Gas Impurity on Cl2 Based Plasma Etching of Polysilicon

Species Charge and Oxidation Mechanism in the “Cathodic” Plasma Oxidation of Silicon

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Plasma anodization as a dry low temperature technique for oxide film growth on silicon substrates

Cited by 19 publications

References 16 publications

Mechanism of Oxidation of Si Surfaces Exposed to O2/Ar Microwave-Excited Plasma

Mechanism of Oxidation of Si Surfaces Exposed to O2/Ar Microwave-Excited Plasma

Effects of O 2 Feed Gas Impurity on Cl2 Based Plasma Etching of Polysilicon

Species Charge and Oxidation Mechanism in the “Cathodic” Plasma Oxidation of Silicon

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Mechanism of Oxidation of Si Surfaces Exposed to O₂/Ar Microwave-Excited Plasma

Mechanism of Oxidation of Si Surfaces Exposed to O₂/Ar Microwave-Excited Plasma