Planarization Ability of Chemical Mechanical Planarization (Cmp) Processes

Abstract

Methods for determining planarization ability of CMP were explored. Options included film thickness measurements of the dielectric over metal and field, TIR measurements using profilometry, and a combination of the two. The attempt to observe the in situ change in the topography was addressed in two distinct experimental approaches. The first approach involved processing wafers for predetermined intervals. The other approach processed different wafers for different amounts of time. The effects of down force and platen rpm on planarization ability were studied using the first approach. Results indicate that planarization is more efficient at higher down forces and higher platen rpm. Slurry property effects were examined using the second method. The planarization ability appears to suffer at elevated pH values. This is attributed to both the enhanced solubility of the silica particles and the dielectric itself.

Qualitative Prediction of SiO[sub 2] Removal Rates during Chemical Mechanical Polishing

“…The more uniform stress distribution at increased relative velocities may lead to improved quality of planarization, in agreement with experimental observation. 21…”