Planar pixel sensors for the ATLAS upgrade: beam tests results

Weingarten, J.; Altenheiner, S.; Beimforde, M.; Benoit, M.; Bomben, M.; Calderini, G.; Gallrapp, C.; George, M.; Gibson, S. M.; Grinstein, S.; Janoska, Z.; Jentzsch, J.; Jinnouchi, O.; Kishida, Takuya; Rosa, A. La; Libov, V.; Macchiolo, A.; Marchiori, G.; Muenstermann, D.; Nagai, R.; Piacquadio, G.; Ristić, B.; Rubinskiy, I.; Rummler, A.; Takubo, Y.; Troska, G.; Tsiskaridtze, S; Tsurin, I.; Unno, Y.; Weigell, P.; Wittig, T.

doi:10.1088/1748-0221/7/10/p10028

Cited by 26 publications

(28 citation statements)

References 20 publications

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“…The 150 µm thick sensors were obtained from an older production at MPG-HLL on SOI 6" wafers while the 285 µm thick sensors were produced on 4" wafers at CIS, as described in more details in [12]. For all the values of the hit efficiencies quoted in the following, the dominant source of uncertainty is systematic and evaluated to be 0.3%, as explained in [16]. After an irradiation fluence between 4 and 6 × 10 15 n eq /cm 2 , FE-I4 modules with 150 and 200 µm thick sensors show similar performances reaching a hit efficiency of about 97% at V bias =500V, while the same module type with a 100µm thick sensor starts to saturate to this value Figure 3: Hit efficiency as a function of the bias voltage for pixel modules of different thicknesses irradiated to a fluence between 4 and 6 × 10 15 n eq /cm 2 .…”

Section: Characterization Of Sensors With Different Thickness After Imentioning

confidence: 99%

Development of n-in-p pixel modules for the ATLAS upgrade at HL-LHC

Macchiolo¹,

Nisius²,

Savic³

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

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Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100-200 µm thick sensors, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements are reported for devices before and after irradiation up to a fluence of 14 × 10 15 n eq /cm 2 . The charge collection and tracking efficiency of the different sensor thicknesses are compared. The outlook for future planar pixel sensor production is discussed, with a focus on sensor design with the pixel pitches (50x50 and 25x100 µm 2 ) foreseen for the RD53 Collaboration read-out chip in 65 nm CMOS technology. An optimization of the biasing structures in the pixel cells is required to avoid the hit efficiency loss presently observed in the punch-through region after irradiation. For this purpose the performance of different layouts have been compared in FE-I4 compatible sensors at various fluence levels by using beam test data. Highly segmented sensors will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. In order to reproduce the performance of 50x50 µm 2 pixels at high pseudo-rapidity values, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle (80• ) with respect to the short pixel direction. Results on cluster shapes, charge collection and hit efficiency will be shown.

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Section: Characterization Of Sensors With Different Thickness After Imentioning

confidence: 99%

Development of n-in-p pixel modules for the ATLAS upgrade at HL-LHC

Macchiolo¹,

Nisius²,

Savic³

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

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“…The impact point of a track is calculated in the middle of the thickness of the active bulk, and a cluster is associated to a track if the track crossed at least one of its pixels. An absolute systematic uncertainty of 0.3% is associated to all hit efficiency measurements in this paper according to [8].…”

Section: Module Characterizationmentioning

confidence: 99%

Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

Terzo¹,

Macchiolo²,

Nisius³

et al. 2014

J. Inst.

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Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 µm, produced at CiS, and 100-200 µm thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowing for a reduced overlap of the modules in the pixel layer close to the beam pipe. The CiS production includes also four chip sensors according to the module geometry planned for the outer layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The modules have been characterized using radioactive sources in the laboratory and with high precision measurements at beam tests to investigate the hit efficiency and charge collection properties at different bias voltages and particle incidence angles. The performance of the different sensor thicknesses and edge designs are compared before and after irradiation up to a fluence of 1.4×10 16 n eq /cm 2 .

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“…The global module efficiency and the hit efficiency at the sensor edge have been extracted. The FE-I3 and FE-I4 modules yield a global efficiency of (99.9 +0.1 −0.3 )% and (99.8 +0.2 −0.3 )% respectively, at a bias voltage of 20 V. The dominant source of the uncertainty for these measurements is systematic, and it has been evaluated as described in [10]. Fig.2 shows the hit efficiency obtained over the edge pixel column, as a function of the distance from the end point of the pixel implant, for the sensor design with only a guard-ring.…”

Section: Active Edge Pixelsmentioning

confidence: 99%

Development of active edge pixel sensors and four-side buttable modules using vertical integration technologies

Macchiolo¹,

Andricek

Moser³

et al. 2014

Nuclear Instruments and Methods in Physics Research Section A:

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a b s t r a c tWe present an R&D activity focused on the development of novel modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The modules consist of n-in-p pixel sensors, 100 or 200 μm thick, produced at VTT (Finland) with an active edge technology, which considerably reduces the dead area at the periphery of the device. The sensors are interconnected with solder bump-bonding to the ATLAS FE-I3 and FE-I4 read-out chips, and characterised with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements will be discussed for devices before and after irradiation up to a fluence of 5 Â 10 15 n eq =cm 2 . We will also report on the R&D activity to obtain Inter Chip Vias (ICVs) on the ATLAS read-out chip in collaboration with the Fraunhofer Institute EMFT. This step is meant to prove the feasibility of the signal transport to the newly created readout pads on the backside of the chips allowing for four side buttable devices without the presently used cantilever for wire bonding. The read-out chips with ICVs will be interconnected to thin pixel sensors, 75 μm and 150 μm thick, with the Solid Liquid Interdiffusion (SLID) technology, which is an alternative to the standard solder bump-bonding.

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Planar pixel sensors for the ATLAS upgrade: beam tests results

Cited by 26 publications

References 20 publications

Development of n-in-p pixel modules for the ATLAS upgrade at HL-LHC

Development of n-in-p pixel modules for the ATLAS upgrade at HL-LHC

Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

Development of active edge pixel sensors and four-side buttable modules using vertical integration technologies

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