Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation

Mollard, L.; Destéfanis, G.; Baier, N.; Rothman, J.; Ballet, P.; Zanatta, J. P.; Tchagaspanian, Michael; Papon, Anne‐Marie; Bourgeois, G.; Barnes, Jean‐Paul; Pautet, C.; Fougères, P.

doi:10.1007/s11664-009-0829-9

Cited by 46 publications

(26 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Previous results have demonstrated state-of-the-art results with operability in excess of 99.8% on TV/4 array (30 lm pitch) over a large band: LPE LWIR and MBE SWIR/MWIR. 2 The status of the p-on-n As-implanted technologies at CEA-LETI is presented in this paper. The first part deals with recent process development: modeling of arsenic implantation and evolution of defects linked to implantation during annealing.…”

Section: Introductionmentioning

confidence: 99%

Status of p-on-n Arsenic-Implanted HgCdTe Technologies

Mollard¹,

Destéfanis²,

Bourgeois³

et al. 2011

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

In this paper recent developments made by the French Atomic Energies and Alternative Energies Commission (CEA) at the Electronics and Information Technology Laboratory (LETI) on the fabrication of planar p-on-n HgCdTe photodiodes are reported. Results obtained on long-wavelength infrared (LWIR) liquid-phase epitaxy (LPE) and mid-and short-wavelength infrared (MWIR/SWIR) molecular beam epitaxy (MBE) have been previously published. For these photodiodes, p-type doping is obtained by arsenic implantation followed by diffusion and activation under Hg-overpressure annealing. The active layer is n-type doped by indium incorporation during growth. Control of the p-on-n junctions is one of the key points of this technology, requiring good knowledge of the arsenic implantation and diffusion and the evolution of implantation-induced defects. Concerning implantation, the impact of dose (from 2 9 10 14 at./cm 2 to 2 9 10 15 at./cm 2 ) and energy (from 50 keV to 500 keV) on As profiles is considered. The profiles after implantation are modeled using Pearson IV moments. Realistic descriptions of arsenic distributions are obtained, and the evolution of moments with implantation conditions is fitted. In addition, implantation damage is examined by transmission electron microscopy (TEM) and the evolution of defects is studied depending on implantation conditions and Hg-overpressure annealing. Previous results obtained on 30-lm-pitch LPE LWIR and MBE MWIR/SWIR showed state-of-the-art detector performance. Since these first results, progress has been made to decrease the pixel pitch to 15 lm and increase the focal-plane array (FPA) format. In this way, 640 9 512 LPE LWIR FPAs have been processed and characterized. In addition we report results obtained on our first p-on-n very long-wavelength infrared (VLWIR) photodiode fabricated at CEA-LETI with k c = 13.35 lm at 50 K. These latest results demonstrate the viability of our technology and materials.

show abstract

Section: Introductionmentioning

confidence: 99%

Status of p-on-n Arsenic-Implanted HgCdTe Technologies

Mollard¹,

Destéfanis²,

Bourgeois³

et al. 2011

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

show abstract

“…[2], for these ion currents we can neglect heating of the sample during the implantation process. After the implantation for the fifth series of samples of the two-stage activation annealing was conducted.…”

Section: Samples and Measurement Proceduresmentioning

confidence: 99%

“…In [2] it was shown that in such structure dark currents become smaller by two orders of magnitude. This is due to low mobility and lifetime of holes that there are minority carriers for the n-base of a photodiode.…”

Section: Introductionmentioning

confidence: 99%

Electrical characteristics of epitaxial MCT after As⁺ implantation

Войцеховский

Іжнін

Korotaev

et al. 2017

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

Abstract. In this work we studied the characteristics of MBE MCT films after the introduction of different energies As+ with different doses of irradiation. Some of the samples were subjected to post-implantation annealing. Electrical characteristics of the samples were determined from Hall measurements. Voltage-current characteristics of the structures were also measured. Activation As and modification of the characteristics of MCT outside the implanted layer after annealing have been detected. Also we found differences in the p-n junction depths and electrically active defects profiles.

show abstract

“…The same kind of heterostructure may also be obtained with LPE layers. As an example, the LETI-Sofradir p on n process makes use of a smart 3D centered interdiffusion process [ 14 ], where the Cd interdiffusion is accelerated in the presence of As. As a consequence, the gap widens in the SCR resulting in a 3D auto centered heterostructure.…”

Section: Narrow Gap Structures (Diodes and Barriodes)mentioning

confidence: 99%