Planar lightwave circuits in fiber-optic communications

Doerr, C.R.; Okamoto, K.

doi:10.1016/b978-0-12-374171-4.00009-5

Cited by 17 publications

(5 citation statements)

References 96 publications

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“…where h and p are the very popular parameters, defining the guided mode field in the literature on optical waveguides [1,2]. V is the product of three elements: the numerical aperture n 2 1 − n 2 2 of a symmetric planar waveguide, d is the radius (or half a width) of the waveguide core, and k 0 is the wave number in the air.…”

Section: Analysis For the Pl Modelmentioning

confidence: 99%

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Investigation for Sidewall Roughness Caused Optical Scattering Loss of Silicon-on-Insulator Waveguides with Confocal Laser Scanning Microscopy

Shang

Sun

et al. 2020

Coatings

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Sidewall roughness-caused optical loss of waveguides is one of the critical limitations to the proliferation of the silicon photonic integrated circuits in fiber-optic communications and optical interconnects in computers, so it is imperative to investigate the distribution characteristics of sidewall roughness and its impact upon the optical losses. In this article, we investigated the distribution properties of waveguide sidewall roughness (SWR) with the analysis for the three-dimensional (3-D) SWR of dielectric waveguides, and, then the accurate SWR measurements for silicon-on-insulator (SOI) waveguide were carried out with confocal laser scanning microscopy (CLSM). Further, we composed a theoretical/experimental combinative model of the SWR-caused optical propagation loss. Consequently, with the systematic simulations for the characteristics of optical propagation loss of SOI waveguides, the two critical points were found: (i) the sidewall roughness-caused optical loss was synchronously dependent on the correlation length and the waveguide width in addition to the SWR and (ii) the theoretical upper limit of the correlation length was the bottleneck to compressing the roughness-induced optical loss. The simulation results for the optical loss characteristics, including the differences between the TE and TM modes, were in accord with the experimental data published in the literature. The above research outcomes are very sustainable to the selection of coatings before/after the SOI waveguide fabrication.

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Section: Analysis For the Pl Modelmentioning

confidence: 99%

“…Higher and higher integration density is the long-standing goal of the optical integrated circuits in the modern optical communications systems [1,2]. Since the beginning of the 21st century, the silicon-on-insulator (SOI) waveguide-based photonic integrated circuits (PIC) have shown unprecedented potential.…”

Section: Introductionmentioning

confidence: 99%

Investigation for Sidewall Roughness Caused Optical Scattering Loss of Silicon-on-Insulator Waveguides with Confocal Laser Scanning Microscopy

Shang

Sun

et al. 2020

Coatings

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“…The simplest structure of the CPM which only includes SOA and SA sections allows the implementation on a photonic integrated circuit (PIC) [26]. The PICs which use active-passive integration, enable increased functionality and circuit reliability, while reducing their size, power, and cost [27], [28]. Also, the active-passive integration allows to set the length of the gain sections and adjust the length of the resonator cavity by changing the length of the passive sections in order to meet the specification of the required repetition rate for a particular application, independent from the ratio between the lengths of the gain and absorber sections [14].…”

Section: Introductionmentioning

confidence: 99%

Absorber Length Optimization of On-Chip Colliding Pulse Mode-Locked Semiconductor Laser

Gordón

Cumbajín

Carpintero

et al. 2018

IEEE J. Select. Topics Quantum Electron.

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We present theoretical and experimental results regarding the saturable absorber length optimization for the generation of stable mode-locked regimes of a novel on-chip colliding pulse mode-locked semiconductor laser structure. We have been able to apply the design criteria acquired from previous theoretical and experimental reports to define a suitable gain section length for a given saturable absorber section length. The latter is independent from the cavity length and allows obtaining stable mode-locked regimes with the required repetition rate and pulse width in the range of picoseconds for different applications. We have developed four on-chip colliding pulse mode-locked laser structures with saturable absorber lengths ranging from 20 to 50 µm in steps of 10 µm with fundamental repetition rate at 25 GHz and twice this frequency at 50 GHz when operated in the colliding pulse modelocked regime. The theoretical study was carried out by using the simulation tool called FreeTWM which is a free travelling wave model software designed for the study of the dynamics of multisection semiconductor lasers, while the experimental analysis was executed on the samples fabricated on a generic InP photonic integrated technology through a multi-projectwafer run. Index Terms-Laser mode locking, optical pulse generation, semiconductor lasers, quantum well lasers, semiconductor device modeling.Carlos Gordón (M'16) is with the Universidad Técnica de Ambato, Ambato, Ecuador, where he has been a Research Professor since 2005. His current research interests include semiconductor short pulse laser systems and robotics.Myriam Cumbajín (M'17) is with the Universidad Tecnológica Indoamérica, Ambato, Ecuador, where she has been a Research Professor since 2017. Her current research interests include semiconductor short pulse laser systems and renewable energy.Guillermo Carpintero (M'01) is an Associate Professor of the Electronic Technology Department, Universidad Carlos III de Madrid. His current research interests include mode-locked lasers, optical frequency synthesis, photonic integrated circuits, and photonic enabled broadband wireless systems. Erwin A. J. M. Bente

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“…As the technology matures, increasing numbers of component-level interconnections are made at the wafer scale. This enables sustained increases in the functionality, performance, and reliability of circuits, while reducing their size, power, and cost [1]. As technology matures, integrated circuit products outperform equivalent combinations of discrete components at the functional level.…”

Section: Introductionmentioning

confidence: 99%

InP photonic circuits using generic integration [Invited]

Williams¹,

Bente²,

Heiss³

et al. 2015

Photon. Res.

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Planar lightwave circuits in fiber-optic communications

Cited by 17 publications

References 96 publications

Investigation for Sidewall Roughness Caused Optical Scattering Loss of Silicon-on-Insulator Waveguides with Confocal Laser Scanning Microscopy

Investigation for Sidewall Roughness Caused Optical Scattering Loss of Silicon-on-Insulator Waveguides with Confocal Laser Scanning Microscopy

Absorber Length Optimization of On-Chip Colliding Pulse Mode-Locked Semiconductor Laser

InP photonic circuits using generic integration [Invited]

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