Planar light-emitting microcavities based on hydrogenated amorphous silicon carbide

Medvedev, А. V.; Феоктистов, Н. А.; Grudinkin, S. A.; Dukin, A. A.; Голубев, В. Г.

doi:10.1134/s1063782614100194

Cited by 6 publications

(1 citation statement)

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“…To deposit a-SiO 2 , silane was strongly diluted with oxygen. Other details of the technological process have been described in our previous communications [32][33][34][35] . The optical thickness of the layers in the structure were monitored in situ by the interference pattern appearing when the intensity of the laser beam re- flected from the surface of a growing film was detected.…”

Section: Samples: Fabrication and Characterizationmentioning

confidence: 99%

Effect of photonic crystal stop-band on photoluminescence ofa−Si1−xCx:H

et al. 2017

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Effects associated with the change in the local density of photonic states in a periodic structure based on alternating a-Si1−xCx:H and a-SiO2 amorphous layers forming a one-dimensional (1D) photonic crystal have been analyzed. The use of a-Si1−xCx:H as the emitting material made it possible to examine the transformation of the photoluminescence spectrum contour that is comparable in width with the photonic stop-band. It was experimentally demonstrated that the emission is enhanced and suppressed in the vicinity of the stop-band. The relative intensities of the luminescence peaks at different edges of the stop-band vary with the detuning of the stop-band position and photoluminescence peak of a single a-Si1−xCx:H film. The Purcell effect in the system under consideration was theoretically described by the method in which the local density of photonic states is calculated in terms of a 1D model. It was shown that the specific part of local density of states substantially increases at the long-wavelength (low-frequency) edge of the stop-band of a 1D photonic crystal as a result of the predominant localization of the electric field of the light wave in the spatial regions of a-Si1−xCx:H which have a higher relative permittivity as compared with a-SiO2.

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Section: Samples: Fabrication and Characterizationmentioning

confidence: 99%