Planar Hall Effect Sensors With Subnanotesla Resolution

Grosz, Asaf; Mor, Vladislav; Paperno, E.; Amrusi, Shai; Faivinov, Igor; Schultz, Moty; Klein, Lior

doi:10.1109/lmag.2013.2276551

Cited by 32 publications

(24 citation statements)

References 13 publications

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“…Since PHE appears a lot in the literature, we will review only a few, representative publications, in order to emphasize the importance of its possible applications. Recently, Grosz et al [ 79 ] reported the fabrication of some elliptical Planar Hall Effect (PHE) sensors. These sensors, made of Permalloy, share a special shape-induced uniaxial anisotropy.…”

Section: Review Of Macroscale Hall Effect-based Devicesmentioning

confidence: 99%

A Comprehensive Review of Integrated Hall Effects in Macro-, Micro-, Nanoscales, and Quantum Devices

Karsenty

2020

Sensors

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A comprehensive review of the main existing devices, based on the classic and new related Hall Effects is hereby presented. The review is divided into sub-categories presenting existing macro-, micro-, nanoscales, and quantum-based components and circuitry applications. Since Hall Effect-based devices use current and magnetic field as an input and voltage as output. researchers and engineers looked for decades to take advantage and integrate these devices into tiny circuitry, aiming to enable new functions such as high-speed switches, in particular at the nanoscale technology. This review paper presents not only an historical overview of past endeavors, but also the remaining challenges to overcome. As part of these trials, one can mention complex design, fabrication, and characterization of smart nanoscale devices such as sensors and amplifiers, towards the next generations of circuitry and modules in nanotechnology. When compared to previous domain-limited text books, specialized technical manuals and focused scientific reviews, all published several decades ago, this up-to-date review paper presents important advantages and novelties: Large coverage of all domains and applications, clear orientation to the nanoscale dimensions, extended bibliography of almost one hundred fifty recent references, review of selected analytical models, summary tables and phenomena schematics. Moreover, the review includes a lateral examination of the integrated Hall Effect per sub-classification of subjects. Among others, the following sub-reviews are presented: Main existing macro/micro/nanoscale devices, materials and elements used for the fabrication, analytical models, numerical complementary models and tools used for simulations, and technological challenges to overcome in order to implement the effect in nanotechnology. Such an up-to-date review may serve the scientific community as a basis for novel research oriented to new nanoscale devices, modules, and Process Development Kit (PDK) markets.

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Section: Review Of Macroscale Hall Effect-based Devicesmentioning

confidence: 99%

A Comprehensive Review of Integrated Hall Effects in Macro-, Micro-, Nanoscales, and Quantum Devices

Karsenty

2020

Sensors

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“…PHE sensors based on elongated magnetic ellipses made of Permalloy exhibit shape-induced magnetic anisotropy along the long axis. [9][10][11][12] The ellipses are shown to have effective single magnetic domain behavior and in the limit of a ≫ b ≫ t the magnitude of the anisotropy field H k is reliably determined by where a, b and t are the ellipse's long axis, short axis, thickness, respectively, and M s is the saturation magnetization. As demonstrated before, these PHE sensors exhibit excellent magnetic field resolution.…”

Section: Introductionmentioning

confidence: 99%

“…As demonstrated before, these PHE sensors exhibit excellent magnetic field resolution. 12 The CPHES presented here is based on a pair of elongated magnetic ellipses made of Permalloy (see Figure 1), and the PHE response is measured across the two ellipses. As we show, parallel magnetization alignment in the two ellipses, corresponding to an ON mode, yields a PHE response similar to a response of a single PHE ellipse, while antiparallel magnetization alignment, corresponding to an OFF mode, yields a negligible response.…”

Section: Introductionmentioning

confidence: 99%

Composed planar Hall effect sensors with dual-mode operation

et al. 2016

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We present a composed planar Hall effect sensor with two modes of operation: (a) an ON mode where the composed sensor responds to magnetic field excitations similarly to the response of a regular planar Hall effect sensor, and (b) an OFF mode where the response is negligible. The composed planar Hall effect sensor switches from the OFF mode to the ON mode when it is exposed to a magnetic field which exceeds a certain threshold determined by the sensor design. The features of this sensor make it useful as a switch triggered by magnetic field and as a sensing device with memory, as its mode of operation indicates exposure to a magnetic field larger than a certain threshold without the need to be activated during the exposure itself.

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“…The former originates from resistance fluctuations, while the latter is commonly attributed to thermally induced domain wall nucleation and motion which can be described in terms of the fluctuation‐dissipation (FD) relation for magnetization . The power density of 1/ f noise in the Wheatstone bridge SMR sensor can be described phenomenologically as

S_{normalE} = \frac{δ_{normalH} V_{normalb}^{2}}{N_{normalc} \cdot Vol \cdot f}

where δ H is the Hooge constant, V b is the bias voltage across the bridge, N c is the free electron density, Vol is the effective volume of NiFe, and f is the frequency. The Hooge constant δ H is a parameter characterizing the amplitude of the 1/ f noise fluctuations.…”

mentioning

confidence: 99%

“…We first estimated the nonmagnetic contribution by saturating the magnetization in easy axis direction and measuring the noise spectrum, from which a δ H value of 1.3 × 10 −3 is obtained by using N c = 1.7 × 10 29 m −3 (refs. ) and Vol = 9.6 × 10 −17 m 3 (see Section S5 of the Supporting Information). Next we performed the same experiments to extract δ H for both DC and AC biased sensor at zero external field.…”

mentioning

confidence: 99%

Ultrathin All‐in‐One Spin Hall Magnetic Sensor with Built‐In AC Excitation Enabled by Spin Current

Yang

Zhang

et al. 2018

Adv Materials Technologies

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fascinating spintronic effects are spinorbit torque (SOT) [10] and spin Hall magnetoresistance (SMR) [11] in ferromagnet (FM)/heavy metal (HM) bilayers. Taking advantage of these intriguing effects, recently we have demonstrated an AMR/ SMR sensor (hereafter we call it SMR sensor considering the fact that SMR is dominant) with the SOT effective field as the built-in linearization mechanism, [12,13] which effectively replaces the sophisticated linearization mechanism employed in conventional MR sensors. [14] However, as the sensors were driven by DC current, we still faced the same issues as commercial AMR sensors, that is, DC offset and domain motion induced noise. Here, we demonstrate that, by introducing AC excitation, we achieved an all-in-one magnetic sensor which embodies multiple functions of AC excitation, domain stabilization, rectification detection, and DC offset cancellation, and importantly, all these features are realized in a simplest possible structure which consists of only an ultrathin NiFe/Pt bilayer. Such kind of integrated AC excitation and rectification are not possible in conventional AMR sensors. The sensors are essentially free of DC offset with negligible hysteresis and low noise (with a detectivity of 1 nT Hz −1/2 at 1 Hz). Through a few proof-ofconcept experiments, we show that these sensors promise great potential in a variety of low-field sensing applications including navigation, angle detection, and wearable electronics.When a charge current passes through a ferromagnet (FM)/ heavy metal (HM) bilayer, it brings about two novel spintronic effects, namely, the SOT [10] and SMR. [11] Both SOT and SMR share the same origin, i.e., the spin current generated in the HM layer by the spin Hall effect (SHE). [15][16][17] The spin current is transverse to the charge current and therefore causes spin accumulation at both the FM/HM interfaces and side surfaces of HM. The spin accumulation at the interfaces is partially absorbed by the FM layer, resulting in a torque on its magnetization, i.e., the SOT. Although the exact mechanism still remains debatable, both Rashba [18] and SHE [15][16][17] are commonly believed to play a crucial role in giving rise to the SOT in FM/ HM bilayers. There are two types of SOTs, one is field-like (FL) and the other is damping-like (DL); the latter is similar to spin transfer torque. Phenomenologically, the two types of torques can be modelled by

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Planar Hall Effect Sensors With Subnanotesla Resolution

Cited by 32 publications

References 13 publications

A Comprehensive Review of Integrated Hall Effects in Macro-, Micro-, Nanoscales, and Quantum Devices

A Comprehensive Review of Integrated Hall Effects in Macro-, Micro-, Nanoscales, and Quantum Devices

Composed planar Hall effect sensors with dual-mode operation

Ultrathin All‐in‐One Spin Hall Magnetic Sensor with Built‐In AC Excitation Enabled by Spin Current

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