Planar GaAs IC technology: Applications for digital LSI

Eden, R.C.; Welch, B.M.; Zucca, R.

doi:10.1109/jssc.1978.1051071

Cited by 92 publications

(9 citation statements)

References 10 publications

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“…Using Schottky diode FET logic (SDFL) 121, the inverter characteristic can be shifted on the input voltage scale such that the inverters can be cascaded, i.e ., the low/high signals of the input match the low/high signals of the output 122 (Fig. 12).…”

Section: Tso Integrated Circuitsmentioning

confidence: 99%

Transparent semiconducting oxides: materials and devices

Grundmann¹,

Frenzel²,

Lajn³

et al. 2010

Physica Status Solidi (a)

133

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Transparent conductive oxides (TCOs) are a well-known material class allowing Ohmic conduction. A large free carrier concentration in the 10 21 cm À3 range and high conductivity (beyond 10 4 S/cm) is feasible simultaneously with high transparency. Applications are manifold and include touch screens and front contacts for displays or solar cells. Transparent semiconducting oxides (TSO) are oxides with an intermediate free carrier concentration (typically 10 14 -10 18 cm À3 ) allowing the formation of depletion layers. We review recent results on TSO-based transistors and inverters. Most work has been reported on MISFETs. We show that MESFETs exhibit high performance and low voltage operation of oxide electronics. MESFET-based inverters offer superior performance compared to results reported for TSO MISFET-based circuits.Optical image of inverter based on thin film MESFETs with Mg 0.003 Zn 0.997 O channels (left) and experimental inverter characteristic for supply voltage of V DD ¼ þ2:0 V (right).

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Section: Tso Integrated Circuitsmentioning

confidence: 99%

Transparent semiconducting oxides: materials and devices

Grundmann¹,

Frenzel²,

Lajn³

et al. 2010

Physica Status Solidi (a)

133

View full text Add to dashboard Cite

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“…Ion implantation is one of the most standard ways to form channel, contact, and isolation regions of transistors. [1][2][3][4] Recently, this technique has been applied to GaN field-effect transistors. [5][6][7][8][9] In particular, for device isolation, since ion implantation is advantageous to mesa etching for surface planarization, N ions or protons have been used for this purpose.…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy

Shiojima

Murase

Yamamoto

et al. 2016

Jpn. J. Appl. Phys.

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Nitrogen-ion-implantation damage on GaN has been clearly visualized using scanning internal photoemission microscopy. Ni Schottky contacts were formed on selectively N-ion-implanted n-GaN surfaces at 80 keV with an ion dose of 1 × 1014 or 1 × 1015 cm−2, and a photocurrent was detected by focusing and scanning a laser beam over the contacts. We found that the photocurrent decreased in the implanted regions due to an increase in the Schottky barrier and carrier depletion. Photocurrent maps showed that the induced damage did not spread from the implanted regions within the spatial resolution of the equipment. We confirmed that this method is a powerful tool for mapping implanted highly resistive regions.

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“…Both of these requirements have been met using i o n -i m p l a n t ation into insulating GaAs substrates (123). In developing GaAs digital integrated circuits that are compatible with LSI, workers at Rockwell have utilized Schottky diode-FET logic, which employs very small, low capacitance Schottky diodes for most logic functions.…”

Section: Microwave Devicesmentioning

confidence: 99%

Compound Semiconductors

Holonyak

Stillman

Wolfe

1978

J. Electrochem. Soc.

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The invention of the transistor (1, 2) in late 1947 and its later embodiment in junction form (3) marked the beginning of a profound change in electronics. Not only did the receiving tube basically become obsolete, but many new device functions emerged, and ultimately unbelievable size reductions and enormous packing densities resulted. As is well known, it became possible to build an entire functional system in a single conducting block of material. Also, new forms of power devices, based on the transistor effect, became possible.With the invention of the transistor the study of electrical conduction in solids took on new importance, and similarly the growth and study of semiconductor crystals, at first, Ge (4). Since Ge is a much more tractable material than other elemental semiconductors, it was natural that the transistor began with Ge, and that in turn the transistor (and p-n junctions) motivated the growth and study of single crystal Ge of great purity (4, 5). In fact, Ge and its successor Si, because of the transistor, have been purified to such high. levels and have been grown with such perfection that Si now even serves as the standard for determination of Avogadro's number (6).The original transistor pioneers were quite aware that beyond their initial experimental material (Ge), Si offered a large potential (7). The real emergence of Si as a transistor material probably came in late 1954 and early 1955 when, at Bell Laboratories, Sidiffused-impurity devices were first constructed. Based on his considerable understanding of switching devices and the need for low off-stage leakage current, John Moll above all others urged the development of diffused-impurity Si devices; for this purpose, in his own group Au-Sb and A1 metallization of Si were developed (8), as well as certain forms of transistor devices (9). The most important form of diffused-impurity p-n junctions came from Carl Frosch (and L. Derick) (1O), including oxide masking and with it the teaching to leave the oxide on Si for protection of the device (11). These developments were sufficient for Moll and his colleagues to be able to convince Jack Morton (spring of 1955) to switch transistor development from Ge to Si. The rest is history, and now where Si "can do the job," there is little interest on the part of device researchers to attempt to displace it with another material. No other material has been as extensively developed, nor offers a natural oxide affording so many processing and device advantages.As useful as Ge and, more so, Si have proven to be in semiconductor devices, they possess also certain limitations. Their bandgaps are indirect and are fixed 4 487C 488C

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Planar GaAs IC technology: Applications for digital LSI

Cited by 92 publications

References 10 publications

Transparent semiconducting oxides: materials and devices

Transparent semiconducting oxides: materials and devices

Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy

Compound Semiconductors

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